Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH3Cl3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system

Ning Dong; Nan Chai; Yongsheng Liu; Xiaofei Liu; Hailong Qin; Xiaowei Yin; Litong Zhang; Laifei Cheng

doi:10.1016/j.jeurceramsoc.2016.05.030

Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH₃Cl₃[Formula presented]₃[Formula presented]₃[Formula presented]₂[Formula presented] system

Ning Dong
, Nan Chai
, Yongsheng Liu
, Xiaofei Liu
, Hailong Qin
, Xiaowei Yin
, Litong Zhang
, Laifei Cheng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In order to guide the kinetic deposition experiments of siliconboron carbonitride ceramics ([Formula presented]) from SiCl₃CH₃[Formula presented]₃[Formula presented]₃[Formula presented]₂[Formula presented] system, the thermodynamic calculation was undertaken using Factsage software. Predominant condensed phases at equilibrium were SiC, Si₃N₄, BN, B₄C and C. The area of phase regions was affected by deposition parameters, such as temperature, total pressure, dilute H₂ ratio, n_CH3SiCl3/(n_NH3 + n_BCl3) and n_NH3/(n_NH3 + n_BCl3). The results showed that [Formula presented] ceramics with desired phases, such as C + SiC + BN, could be obtained via this system by controlling above parameters theoretically. Kinetic verification at 900 °C demonstrated that [Formula presented] ceramic could be obtained by low pressure chemical vapor deposition/infiltration from this system. The deposition was amorphous from XRD spectra and mainly constituted by [Formula presented], [Formula presented] and [Formula presented] bonds from XPS analysis, which was in agreement with the results of thermodynamic calculation in general.

Original language	English
Pages (from-to)	3581-3591
Number of pages	11
Journal	Journal of the European Ceramic Society
Volume	36
Issue number	15
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2016.05.030
State	Published - 1 Nov 2016

Keywords

Experimental verification
Low pressure chemical vapor deposition/infiltration
Siliconboron carbonitride ceramic
Thermodynamic analysis

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Dong, N., Chai, N., Liu, Y., Liu, X., Qin, H., Yin, X., Zhang, L., & Cheng, L. (2016). Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH₃Cl₃[Formula presented]₃[Formula presented]₃[Formula presented]₂[Formula presented] system. Journal of the European Ceramic Society, 36(15), 3581-3591. https://doi.org/10.1016/j.jeurceramsoc.2016.05.030

@article{88b767c12bf54364b6d12c65880c39ba,

title = "Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH3Cl3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system",

abstract = "In order to guide the kinetic deposition experiments of siliconboron carbonitride ceramics ([Formula presented]) from SiCl3CH3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system, the thermodynamic calculation was undertaken using Factsage software. Predominant condensed phases at equilibrium were SiC, Si3N4, BN, B4C and C. The area of phase regions was affected by deposition parameters, such as temperature, total pressure, dilute H2 ratio, nCH3SiCl3/(nNH3 + nBCl3) and nNH3/(nNH3 + nBCl3). The results showed that [Formula presented] ceramics with desired phases, such as C + SiC + BN, could be obtained via this system by controlling above parameters theoretically. Kinetic verification at 900 °C demonstrated that [Formula presented] ceramic could be obtained by low pressure chemical vapor deposition/infiltration from this system. The deposition was amorphous from XRD spectra and mainly constituted by [Formula presented], [Formula presented] and [Formula presented] bonds from XPS analysis, which was in agreement with the results of thermodynamic calculation in general.",

keywords = "Experimental verification, Low pressure chemical vapor deposition/infiltration, Siliconboron carbonitride ceramic, Thermodynamic analysis",

author = "Ning Dong and Nan Chai and Yongsheng Liu and Xiaofei Liu and Hailong Qin and Xiaowei Yin and Litong Zhang and Laifei Cheng",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = nov,

day = "1",

doi = "10.1016/j.jeurceramsoc.2016.05.030",

language = "英语",

volume = "36",

pages = "3581--3591",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "15",

}

Dong, N, Chai, N, Liu, Y, Liu, X, Qin, H, Yin, X , Zhang, L & Cheng, L 2016, 'Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH₃Cl₃[Formula presented]₃[Formula presented]₃[Formula presented]₂[Formula presented] system', Journal of the European Ceramic Society, vol. 36, no. 15, pp. 3581-3591. https://doi.org/10.1016/j.jeurceramsoc.2016.05.030

Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH₃Cl₃[Formula presented]₃[Formula presented]₃[Formula presented]₂[Formula presented] system. / Dong, Ning; Chai, Nan; Liu, Yongsheng et al.
In: Journal of the European Ceramic Society, Vol. 36, No. 15, 01.11.2016, p. 3581-3591.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH3Cl3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system

AU - Dong, Ning

AU - Chai, Nan

AU - Liu, Yongsheng

AU - Liu, Xiaofei

AU - Qin, Hailong

AU - Yin, Xiaowei

AU - Zhang, Litong

AU - Cheng, Laifei

PY - 2016/11/1

Y1 - 2016/11/1

N2 - In order to guide the kinetic deposition experiments of siliconboron carbonitride ceramics ([Formula presented]) from SiCl3CH3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system, the thermodynamic calculation was undertaken using Factsage software. Predominant condensed phases at equilibrium were SiC, Si3N4, BN, B4C and C. The area of phase regions was affected by deposition parameters, such as temperature, total pressure, dilute H2 ratio, nCH3SiCl3/(nNH3 + nBCl3) and nNH3/(nNH3 + nBCl3). The results showed that [Formula presented] ceramics with desired phases, such as C + SiC + BN, could be obtained via this system by controlling above parameters theoretically. Kinetic verification at 900 °C demonstrated that [Formula presented] ceramic could be obtained by low pressure chemical vapor deposition/infiltration from this system. The deposition was amorphous from XRD spectra and mainly constituted by [Formula presented], [Formula presented] and [Formula presented] bonds from XPS analysis, which was in agreement with the results of thermodynamic calculation in general.

AB - In order to guide the kinetic deposition experiments of siliconboron carbonitride ceramics ([Formula presented]) from SiCl3CH3[Formula presented]3[Formula presented]3[Formula presented]2[Formula presented] system, the thermodynamic calculation was undertaken using Factsage software. Predominant condensed phases at equilibrium were SiC, Si3N4, BN, B4C and C. The area of phase regions was affected by deposition parameters, such as temperature, total pressure, dilute H2 ratio, nCH3SiCl3/(nNH3 + nBCl3) and nNH3/(nNH3 + nBCl3). The results showed that [Formula presented] ceramics with desired phases, such as C + SiC + BN, could be obtained via this system by controlling above parameters theoretically. Kinetic verification at 900 °C demonstrated that [Formula presented] ceramic could be obtained by low pressure chemical vapor deposition/infiltration from this system. The deposition was amorphous from XRD spectra and mainly constituted by [Formula presented], [Formula presented] and [Formula presented] bonds from XPS analysis, which was in agreement with the results of thermodynamic calculation in general.

KW - Experimental verification

KW - Low pressure chemical vapor deposition/infiltration

KW - Siliconboron carbonitride ceramic

KW - Thermodynamic analysis

UR - https://www.scopus.com/pages/publications/84973579544

U2 - 10.1016/j.jeurceramsoc.2016.05.030

DO - 10.1016/j.jeurceramsoc.2016.05.030

M3 - 文章

AN - SCOPUS:84973579544

SN - 0955-2219

VL - 36

SP - 3581

EP - 3591

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 15

ER -

Dong N, Chai N, Liu Y, Liu X, Qin H, Yin X et al. Thermodynamic analysis on deposition of [Formula presented] ceramic by low pressure chemical vapor deposition/infiltration from SiCH₃Cl₃[Formula presented]₃[Formula presented]₃[Formula presented]₂[Formula presented] system. Journal of the European Ceramic Society. 2016 Nov 1;36(15):3581-3591. doi: 10.1016/j.jeurceramsoc.2016.05.030