The surface leakage currents of CdZnTe wafers

Gangqiang Zha, Wanqi Jie, Tingting Tan, Peisen Li

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The surface leakage currents (SLCs) and surface sheet resistances (SSRs) of CdZnTe (1 1 0), (1 1 1) A and (1 1 1) B surfaces after etching with Br-MeOH solution, chemo-mechanical polishing (CMP) and passivation were measured in the parallel stripe model, respectively. Meanwhile the surface compositions were determined by X-ray photoelectron spectroscopy (XPS). Te enrichment introduced by etching with Br-MeOH resulted in the increase of the SLCs of CdZnTe wafers. After chemo-mechanical polishing, Te enrichment was removed, and SLCs decreased. CdZnTe (1 1 1) B without Te enrichment possesses higher SLC than that of (1 1 1) A, and (1 1 0) surface has the lowest SLC, which should be attributed to the lower surface dangling bonds. Passivation treatment with NH 4 F + H 2 O 2 is an effective method to decrease SLCs of CdZnTe, by which the SLC was decreased two orders.

Original languageEnglish
Pages (from-to)3476-3479
Number of pages4
JournalApplied Surface Science
Volume253
Issue number7
DOIs
StatePublished - 30 Jan 2007

Keywords

  • CdZnTe
  • Chemo-mechanical polishing
  • Passivation
  • Surface leakage current
  • Surface sheet resistance

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