The study on the surface state of CdZnTe (1 1 0) surface

Gangqiang Zha; Wanqi Jie; Qiang Li; Dongmei Zeng; Ge Yang; Xuxu Bai; Tao Wang; Wenhua Zhang; Faqiang Xu

doi:10.1016/j.apsusc.2005.11.061

The study on the surface state of CdZnTe (1 1 0) surface

Gangqiang Zha
, Wanqi Jie
, Qiang Li
, Dongmei Zeng
, Ge Yang
, Xuxu Bai
, Tao Wang
, Wenhua Zhang
, Faqiang Xu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian
University of Science and Technology of China

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Angle-resolved photoemission spectroscopy (ARPES) was used to characterize the surface state of clean CdZnTe (1 1 0) surface. The surface state of CdZnTe with the peak at 0.9 eV below the Fermi level is identified. Meanwhile, Photoluminescence (PL) spectrum confirmed that there existed a surface trap state which introduced a deep-level peak at 1.510 eV. The surface trap states can be decreased by aging in dry-air. The surface leakage current was measured also by I-V measurements. After aging, the leakage current was decreased remarkably, which suggested that the aging treatment is an effective method to decrease the surface trap state.

Original language	English
Pages (from-to)	8421-8423
Number of pages	3
Journal	Applied Surface Science
Volume	252
Issue number	24
DOIs	https://doi.org/10.1016/j.apsusc.2005.11.061
State	Published - 15 Oct 2006

Keywords

ARPES
Aging
CdZnTe crystal
I-V measurement
PL
Surface state

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10.1016/j.apsusc.2005.11.061

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title = "The study on the surface state of CdZnTe (1 1 0) surface",

abstract = "Angle-resolved photoemission spectroscopy (ARPES) was used to characterize the surface state of clean CdZnTe (1 1 0) surface. The surface state of CdZnTe with the peak at 0.9 eV below the Fermi level is identified. Meanwhile, Photoluminescence (PL) spectrum confirmed that there existed a surface trap state which introduced a deep-level peak at 1.510 eV. The surface trap states can be decreased by aging in dry-air. The surface leakage current was measured also by I-V measurements. After aging, the leakage current was decreased remarkably, which suggested that the aging treatment is an effective method to decrease the surface trap state.",

keywords = "ARPES, Aging, CdZnTe crystal, I-V measurement, PL, Surface state",

author = "Gangqiang Zha and Wanqi Jie and Qiang Li and Dongmei Zeng and Ge Yang and Xuxu Bai and Tao Wang and Wenhua Zhang and Faqiang Xu",

year = "2006",

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doi = "10.1016/j.apsusc.2005.11.061",

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TY - JOUR

T1 - The study on the surface state of CdZnTe (1 1 0) surface

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Li, Qiang

AU - Zeng, Dongmei

AU - Yang, Ge

AU - Bai, Xuxu

AU - Wang, Tao

AU - Zhang, Wenhua

AU - Xu, Faqiang

PY - 2006/10/15

Y1 - 2006/10/15

N2 - Angle-resolved photoemission spectroscopy (ARPES) was used to characterize the surface state of clean CdZnTe (1 1 0) surface. The surface state of CdZnTe with the peak at 0.9 eV below the Fermi level is identified. Meanwhile, Photoluminescence (PL) spectrum confirmed that there existed a surface trap state which introduced a deep-level peak at 1.510 eV. The surface trap states can be decreased by aging in dry-air. The surface leakage current was measured also by I-V measurements. After aging, the leakage current was decreased remarkably, which suggested that the aging treatment is an effective method to decrease the surface trap state.

AB - Angle-resolved photoemission spectroscopy (ARPES) was used to characterize the surface state of clean CdZnTe (1 1 0) surface. The surface state of CdZnTe with the peak at 0.9 eV below the Fermi level is identified. Meanwhile, Photoluminescence (PL) spectrum confirmed that there existed a surface trap state which introduced a deep-level peak at 1.510 eV. The surface trap states can be decreased by aging in dry-air. The surface leakage current was measured also by I-V measurements. After aging, the leakage current was decreased remarkably, which suggested that the aging treatment is an effective method to decrease the surface trap state.

KW - ARPES

KW - Aging

KW - CdZnTe crystal

KW - I-V measurement

KW - PL

KW - Surface state

UR - https://www.scopus.com/pages/publications/33748972076

U2 - 10.1016/j.apsusc.2005.11.061

DO - 10.1016/j.apsusc.2005.11.061

M3 - 文章

AN - SCOPUS:33748972076

SN - 0169-4332

VL - 252

SP - 8421

EP - 8423

JO - Applied Surface Science

JF - Applied Surface Science

IS - 24

ER -

The study on the surface state of CdZnTe (1 1 0) surface

Abstract

Keywords

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