The regulation of resistivity for SiHfBCN thin films prepared by magnetron sputtering method

Xingang Luan; Shaomin Gu; Qiqi Zhang; Sam Zhang; Laifei Cheng

doi:10.1016/j.sna.2022.113865

The regulation of resistivity for SiHfBCN thin films prepared by magnetron sputtering method

Xingang Luan, Shaomin Gu, Qiqi Zhang, Sam Zhang, Laifei Cheng

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

SiHfBCN ceramic is a kind of potential thin film electrode material applied in high temperature sensors. The ability to tune the resistivity is of primary importance for its further applications. Therefore, in this paper, the SiHfBCN film was prepared using magnetron sputtering method. The regulation means of resistivity were investigated through analyzing the relationship between microstructure and resistivity. The result shows that the resistivity of amorphous SiHfBCN film is mainly related to the overall electronegativity difference and contents of insulating chemical bonds. The resistivity of SiHfBCN films can be controlled over a broad range by changing their composition. In addition, the behavior of annealed SiHfBCN indicates a stable structure.

Original language	English
Article number	113865
Journal	Sensors and Actuators, A: Physical
Volume	346
DOIs	https://doi.org/10.1016/j.sna.2022.113865
State	Published - 16 Oct 2022

Keywords

Resistivity
SiHfBCN film
Thin film electrode

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10.1016/j.sna.2022.113865

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title = "The regulation of resistivity for SiHfBCN thin films prepared by magnetron sputtering method",

abstract = "SiHfBCN ceramic is a kind of potential thin film electrode material applied in high temperature sensors. The ability to tune the resistivity is of primary importance for its further applications. Therefore, in this paper, the SiHfBCN film was prepared using magnetron sputtering method. The regulation means of resistivity were investigated through analyzing the relationship between microstructure and resistivity. The result shows that the resistivity of amorphous SiHfBCN film is mainly related to the overall electronegativity difference and contents of insulating chemical bonds. The resistivity of SiHfBCN films can be controlled over a broad range by changing their composition. In addition, the behavior of annealed SiHfBCN indicates a stable structure.",

keywords = "Resistivity, SiHfBCN film, Thin film electrode",

author = "Xingang Luan and Shaomin Gu and Qiqi Zhang and Sam Zhang and Laifei Cheng",

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year = "2022",

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day = "16",

doi = "10.1016/j.sna.2022.113865",

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T1 - The regulation of resistivity for SiHfBCN thin films prepared by magnetron sputtering method

AU - Luan, Xingang

AU - Gu, Shaomin

AU - Zhang, Qiqi

AU - Zhang, Sam

AU - Cheng, Laifei

PY - 2022/10/16

Y1 - 2022/10/16

N2 - SiHfBCN ceramic is a kind of potential thin film electrode material applied in high temperature sensors. The ability to tune the resistivity is of primary importance for its further applications. Therefore, in this paper, the SiHfBCN film was prepared using magnetron sputtering method. The regulation means of resistivity were investigated through analyzing the relationship between microstructure and resistivity. The result shows that the resistivity of amorphous SiHfBCN film is mainly related to the overall electronegativity difference and contents of insulating chemical bonds. The resistivity of SiHfBCN films can be controlled over a broad range by changing their composition. In addition, the behavior of annealed SiHfBCN indicates a stable structure.

AB - SiHfBCN ceramic is a kind of potential thin film electrode material applied in high temperature sensors. The ability to tune the resistivity is of primary importance for its further applications. Therefore, in this paper, the SiHfBCN film was prepared using magnetron sputtering method. The regulation means of resistivity were investigated through analyzing the relationship between microstructure and resistivity. The result shows that the resistivity of amorphous SiHfBCN film is mainly related to the overall electronegativity difference and contents of insulating chemical bonds. The resistivity of SiHfBCN films can be controlled over a broad range by changing their composition. In addition, the behavior of annealed SiHfBCN indicates a stable structure.

KW - Resistivity

KW - SiHfBCN film

KW - Thin film electrode

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DO - 10.1016/j.sna.2022.113865

M3 - 文章

AN - SCOPUS:85137263455

SN - 0924-4247

VL - 346

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

M1 - 113865

ER -

The regulation of resistivity for SiHfBCN thin films prepared by magnetron sputtering method

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