The microstructure of SiCN ceramics and their excellent electromagnetic wave absorbing properties

Xiaofei Liu; Litong Zhang; Xiaowei Yin; Fang Ye; Yongsheng Liu; Laifei Cheng

doi:10.1016/j.ceramint.2015.05.097

The microstructure of SiCN ceramics and their excellent electromagnetic wave absorbing properties

Xiaofei Liu, Litong Zhang, Xiaowei Yin, Fang Ye, Yongsheng Liu, Laifei Cheng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

In order to increase the controllability of the deposition process of SiCN ceramics, SiCN ceramics were introduced into porous Si₃N₄ substrates by low pressure chemical vapor infiltration (LPCVI) using a simpler gaseous mixture of SiCl₃CH₃/NH₃/H₂ to substitute the gaseous mixture of SiCl₄/C₃H₆/NH₃/H₂. The as-prepared SiCN ceramics attained the microstructure of nano-sized graphite crystals distributing in amorphous SiCN phase. The SiCN ceramics with this unique microstructure had suitable relative complex permittivity, leading to excellent electromagnetic (EM) wave absorbing performance. The minimum reflection coefficient of SiCN–Si₃N₄ ceramics was −40 dB (>99.99% absorption) at 11.1 GHz with the thickness of 3 mm. When the thickness was 3.25 mm, reflection coefficient of SiCN–Si₃N₄ ceramics was lower than −10 dB (>90% absorption) at the whole X-band.

Original language	English
Pages (from-to)	11372-11378
Number of pages	7
Journal	Ceramics International
Volume	41
Issue number	9
DOIs	https://doi.org/10.1016/j.ceramint.2015.05.097
State	Published - Nov 2015

Keywords

C. Dielectric properties
Chemical vapor infiltration
EM wave absorption
SiCN ceramics

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10.1016/j.ceramint.2015.05.097

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title = "The microstructure of SiCN ceramics and their excellent electromagnetic wave absorbing properties",

abstract = "In order to increase the controllability of the deposition process of SiCN ceramics, SiCN ceramics were introduced into porous Si3N4 substrates by low pressure chemical vapor infiltration (LPCVI) using a simpler gaseous mixture of SiCl3CH3/NH3/H2 to substitute the gaseous mixture of SiCl4/C3H6/NH3/H2. The as-prepared SiCN ceramics attained the microstructure of nano-sized graphite crystals distributing in amorphous SiCN phase. The SiCN ceramics with this unique microstructure had suitable relative complex permittivity, leading to excellent electromagnetic (EM) wave absorbing performance. The minimum reflection coefficient of SiCN–Si3N4 ceramics was −40 dB (>99.99% absorption) at 11.1 GHz with the thickness of 3 mm. When the thickness was 3.25 mm, reflection coefficient of SiCN–Si3N4 ceramics was lower than −10 dB (>90% absorption) at the whole X-band.",

keywords = "C. Dielectric properties, Chemical vapor infiltration, EM wave absorption, SiCN ceramics",

author = "Xiaofei Liu and Litong Zhang and Xiaowei Yin and Fang Ye and Yongsheng Liu and Laifei Cheng",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd and Techna Group S.r.l.",

year = "2015",

month = nov,

doi = "10.1016/j.ceramint.2015.05.097",

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T1 - The microstructure of SiCN ceramics and their excellent electromagnetic wave absorbing properties

AU - Liu, Xiaofei

AU - Zhang, Litong

AU - Yin, Xiaowei

AU - Ye, Fang

AU - Liu, Yongsheng

AU - Cheng, Laifei

PY - 2015/11

Y1 - 2015/11

N2 - In order to increase the controllability of the deposition process of SiCN ceramics, SiCN ceramics were introduced into porous Si3N4 substrates by low pressure chemical vapor infiltration (LPCVI) using a simpler gaseous mixture of SiCl3CH3/NH3/H2 to substitute the gaseous mixture of SiCl4/C3H6/NH3/H2. The as-prepared SiCN ceramics attained the microstructure of nano-sized graphite crystals distributing in amorphous SiCN phase. The SiCN ceramics with this unique microstructure had suitable relative complex permittivity, leading to excellent electromagnetic (EM) wave absorbing performance. The minimum reflection coefficient of SiCN–Si3N4 ceramics was −40 dB (>99.99% absorption) at 11.1 GHz with the thickness of 3 mm. When the thickness was 3.25 mm, reflection coefficient of SiCN–Si3N4 ceramics was lower than −10 dB (>90% absorption) at the whole X-band.

AB - In order to increase the controllability of the deposition process of SiCN ceramics, SiCN ceramics were introduced into porous Si3N4 substrates by low pressure chemical vapor infiltration (LPCVI) using a simpler gaseous mixture of SiCl3CH3/NH3/H2 to substitute the gaseous mixture of SiCl4/C3H6/NH3/H2. The as-prepared SiCN ceramics attained the microstructure of nano-sized graphite crystals distributing in amorphous SiCN phase. The SiCN ceramics with this unique microstructure had suitable relative complex permittivity, leading to excellent electromagnetic (EM) wave absorbing performance. The minimum reflection coefficient of SiCN–Si3N4 ceramics was −40 dB (>99.99% absorption) at 11.1 GHz with the thickness of 3 mm. When the thickness was 3.25 mm, reflection coefficient of SiCN–Si3N4 ceramics was lower than −10 dB (>90% absorption) at the whole X-band.

KW - C. Dielectric properties

KW - Chemical vapor infiltration

KW - EM wave absorption

KW - SiCN ceramics

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DO - 10.1016/j.ceramint.2015.05.097

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SN - 0272-8842

VL - 41

SP - 11372

EP - 11378

JO - Ceramics International

JF - Ceramics International

IS - 9

ER -

The microstructure of SiCN ceramics and their excellent electromagnetic wave absorbing properties

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Keywords

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