The investigation of defects in HgCdTe crystals grown by SSR technique

Yue Wang; Quanbao Li; Qingling Han; Bingwen Song; Wanqi Jie; Yaohe Zhou

doi:10.1117/12.318058

The investigation of defects in HgCdTe crystals grown by SSR technique

Yue Wang, Quanbao Li, Qingling Han, Bingwen Song, Wanqi Jie, Yaohe Zhou

Kunming Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

HgCdTe is a very important material for infrared detector. The Solid State Recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3553
DOIs	https://doi.org/10.1117/12.318058
State	Published - 1998
Externally published	Yes
Event	Detectors, Focal Plane Arrays, and Imaging Devices II - Beijing, China Duration: 18 Sep 1998 → 19 Sep 1998

Keywords

Crystal structure
Defects
HgCdTe crystal
Solid state recrystallization

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10.1117/12.318058

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title = "The investigation of defects in HgCdTe crystals grown by SSR technique",

abstract = "HgCdTe is a very important material for infrared detector. The Solid State Recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.",

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author = "Yue Wang and Quanbao Li and Qingling Han and Bingwen Song and Wanqi Jie and Yaohe Zhou",

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T1 - The investigation of defects in HgCdTe crystals grown by SSR technique

AU - Wang, Yue

AU - Li, Quanbao

AU - Han, Qingling

AU - Song, Bingwen

AU - Jie, Wanqi

AU - Zhou, Yaohe

PY - 1998

Y1 - 1998

N2 - HgCdTe is a very important material for infrared detector. The Solid State Recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.

AB - HgCdTe is a very important material for infrared detector. The Solid State Recrystallization (SSR) is a very useful method to prepare HgCdTe single crystal. The defects in as-grown HgCdTe crystals grown by SSR method are introduced, the relationship between cause of resulting in these defects and crystal growth process is discussed simply in this paper. The research results have shown: if raw material purity is raised, stoichiometry is suitable and quench process is improved, the defects in HgCdTe crystals can be reduced and the quality of as-grown HgCdTe crystals can be improved.

KW - Crystal structure

KW - Defects

KW - HgCdTe crystal

KW - Solid state recrystallization

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DO - 10.1117/12.318058

M3 - 会议文章

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SN - 0277-786X

VL - 3553

SP - 1

EP - 8

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Detectors, Focal Plane Arrays, and Imaging Devices II

Y2 - 18 September 1998 through 19 September 1998

ER -

The investigation of defects in HgCdTe crystals grown by SSR technique

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Keywords

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