Abstract
This work investigated the interfacial reactions between Ni-based superalloys and SiO2 crucibles during vacuum induction melting. Through thermodynamic and kinetic analyses of the interfacial reactions, the underlying mechanisms of the interactions at the superalloy/SiO2 interface are elucidated. The interfacial reactions are facilitated by elemental diffusion at the interface. The Al atoms in the alloy preferentially diffuse to the interface, where they react with O atoms diffusing from the crucible to form Al2O3. The initially formed Al2O3 serves as heterogeneous nucleation sites for TiC. Consequently, a continuous and uniform Al2O3 layer, along with a discontinuous TiC layer, formed at the superalloy/SiO2 interface. Transmission electron microscopy (TEM) analysis confirmed the orientation relationship between the TiC and the superalloy matrix as [01‾1]TiC//[1‾12]γ, indicating that the TiC precipitates from the alloy matrix. A simplified two-factor analysis of variance (ANOVA) of the interfacial reaction layer thickness data reveals that within the temperature range slightly above the melting point of the superalloy, the melting time is the primary factor that significantly affects the thickness of the interfacial reaction layer.
| Original language | English |
|---|---|
| Article number | 114178 |
| Journal | Vacuum |
| Volume | 237 |
| DOIs | |
| State | Published - Jul 2025 |
Keywords
- Interfacial diffusion
- Interfacial reaction
- SiO crucible
- Superalloy
- Vacuum induction melting
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