The influence of critical current density of Bi-2212 superconductors by defects after Yb-doping

Tianni Lu; Cuiping Zhang; Shengwu Guo; Yifang Wu; Chengshan Li; Lian Zhou

doi:10.1016/j.physc.2015.08.004

The influence of critical current density of Bi-2212 superconductors by defects after Yb-doping

Tianni Lu, Cuiping Zhang, Shengwu Guo, Yifang Wu, Chengshan Li, Lian Zhou

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Bi₂Sr₂Ca_1-xYb_xCu₂O_8+δ (Bi-2212) single crystals with x = 0.000, 0.005, 0.010 and 0.020 have been prepared by self-flux method. The influences of Yb doping on the formation of the dislocations in the lattice structures, as well as the related current carrying capability are investigated. Due to the SQUID measurement and the Bean model calculation, the maximum critical current density (Jc) is obtained when the Yb doping content is x = 0.010, though the Tc and the carrier concentration are not in the optimal region. Based on the HRTEM analyses of the Ca-O and Cu-O₂ layers, the optimal dislocation density in the Cu-O₂ layers is deduced according to the number of the dislocations per unit area. Besides, the sizes of the dislocations also prove the effectiveness of Yb substitution on the enhancement of the current carrying capability in Bi-2212 single crystals.

Original language	English
Article number	1252903
Pages (from-to)	24-27
Number of pages	4
Journal	Physica C: Superconductivity and its Applications
Volume	519
DOIs	https://doi.org/10.1016/j.physc.2015.08.004
State	Published - 15 Dec 2015
Externally published	Yes

Keywords

Bi-2212 single crystal
Defects
Doping
HRTEM

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10.1016/j.physc.2015.08.004

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title = "The influence of critical current density of Bi-2212 superconductors by defects after Yb-doping",

abstract = "Bi2Sr2Ca1-xYbxCu2O8+δ (Bi-2212) single crystals with x = 0.000, 0.005, 0.010 and 0.020 have been prepared by self-flux method. The influences of Yb doping on the formation of the dislocations in the lattice structures, as well as the related current carrying capability are investigated. Due to the SQUID measurement and the Bean model calculation, the maximum critical current density (Jc) is obtained when the Yb doping content is x = 0.010, though the Tc and the carrier concentration are not in the optimal region. Based on the HRTEM analyses of the Ca-O and Cu-O2 layers, the optimal dislocation density in the Cu-O2 layers is deduced according to the number of the dislocations per unit area. Besides, the sizes of the dislocations also prove the effectiveness of Yb substitution on the enhancement of the current carrying capability in Bi-2212 single crystals.",

keywords = "Bi-2212 single crystal, Defects, Doping, HRTEM",

author = "Tianni Lu and Cuiping Zhang and Shengwu Guo and Yifang Wu and Chengshan Li and Lian Zhou",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = dec,

day = "15",

doi = "10.1016/j.physc.2015.08.004",

language = "英语",

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T1 - The influence of critical current density of Bi-2212 superconductors by defects after Yb-doping

AU - Lu, Tianni

AU - Zhang, Cuiping

AU - Guo, Shengwu

AU - Wu, Yifang

AU - Li, Chengshan

AU - Zhou, Lian

PY - 2015/12/15

Y1 - 2015/12/15

N2 - Bi2Sr2Ca1-xYbxCu2O8+δ (Bi-2212) single crystals with x = 0.000, 0.005, 0.010 and 0.020 have been prepared by self-flux method. The influences of Yb doping on the formation of the dislocations in the lattice structures, as well as the related current carrying capability are investigated. Due to the SQUID measurement and the Bean model calculation, the maximum critical current density (Jc) is obtained when the Yb doping content is x = 0.010, though the Tc and the carrier concentration are not in the optimal region. Based on the HRTEM analyses of the Ca-O and Cu-O2 layers, the optimal dislocation density in the Cu-O2 layers is deduced according to the number of the dislocations per unit area. Besides, the sizes of the dislocations also prove the effectiveness of Yb substitution on the enhancement of the current carrying capability in Bi-2212 single crystals.

AB - Bi2Sr2Ca1-xYbxCu2O8+δ (Bi-2212) single crystals with x = 0.000, 0.005, 0.010 and 0.020 have been prepared by self-flux method. The influences of Yb doping on the formation of the dislocations in the lattice structures, as well as the related current carrying capability are investigated. Due to the SQUID measurement and the Bean model calculation, the maximum critical current density (Jc) is obtained when the Yb doping content is x = 0.010, though the Tc and the carrier concentration are not in the optimal region. Based on the HRTEM analyses of the Ca-O and Cu-O2 layers, the optimal dislocation density in the Cu-O2 layers is deduced according to the number of the dislocations per unit area. Besides, the sizes of the dislocations also prove the effectiveness of Yb substitution on the enhancement of the current carrying capability in Bi-2212 single crystals.

KW - Bi-2212 single crystal

KW - Defects

KW - Doping

KW - HRTEM

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U2 - 10.1016/j.physc.2015.08.004

DO - 10.1016/j.physc.2015.08.004

M3 - 文章

AN - SCOPUS:84942097011

SN - 0921-4534

VL - 519

SP - 24

EP - 27

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

M1 - 1252903

ER -

The influence of critical current density of Bi-2212 superconductors by defects after Yb-doping

Abstract

Keywords

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