The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

Sihong Wu; Gangqiang Zha; Kun Cao; Jinghua Fu; Yang Li; Y. Wang; W. Jie; Tingting Tan

doi:10.1016/j.vacuum.2019.108852

The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

Sihong Wu
, Gangqiang Zha
, Kun Cao
, Jinghua Fu
, Yang Li
, Y. Wang
, W. Jie
, Tingting Tan

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 10⁵ cm⁻², and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10⁻³ cm²V⁻¹ and 750 cm² V⁻¹s⁻¹, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for ²⁴¹Am@5.49 MeV alpha particles and 31% for ²⁴¹Am@59.5 KeV gamma-ray.

Original language	English
Article number	108852
Journal	Vacuum
Volume	168
DOIs	https://doi.org/10.1016/j.vacuum.2019.108852
State	Published - Oct 2019

Keywords

CdZnTe
Close spaced sublimation
Epitaxial film
Radiation detector

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10.1016/j.vacuum.2019.108852

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title = "The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector",

abstract = "High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 {\texttimes} 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 {\texttimes} 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2\% for 241Am@5.49 MeV alpha particles and 31\% for 241Am@59.5 KeV gamma-ray.",

keywords = "CdZnTe, Close spaced sublimation, Epitaxial film, Radiation detector",

author = "Sihong Wu and Gangqiang Zha and Kun Cao and Jinghua Fu and Yang Li and Y. Wang and W. Jie and Tingting Tan",

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year = "2019",

month = oct,

doi = "10.1016/j.vacuum.2019.108852",

language = "英语",

volume = "168",

journal = "Vacuum",

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TY - JOUR

T1 - The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

AU - Wu, Sihong

AU - Zha, Gangqiang

AU - Cao, Kun

AU - Fu, Jinghua

AU - Li, Yang

AU - Wang, Y.

AU - Jie, W.

AU - Tan, Tingting

PY - 2019/10

Y1 - 2019/10

N2 - High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.

AB - High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.

KW - CdZnTe

KW - Close spaced sublimation

KW - Epitaxial film

KW - Radiation detector

UR - https://www.scopus.com/pages/publications/85070541727

U2 - 10.1016/j.vacuum.2019.108852

DO - 10.1016/j.vacuum.2019.108852

M3 - 文章

AN - SCOPUS:85070541727

SN - 0042-207X

VL - 168

JO - Vacuum

JF - Vacuum

M1 - 108852

ER -

The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

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Keywords

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