Abstract
High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.
Original language | English |
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Article number | 108852 |
Journal | Vacuum |
Volume | 168 |
DOIs | |
State | Published - Oct 2019 |
Keywords
- CdZnTe
- Close spaced sublimation
- Epitaxial film
- Radiation detector