The growth of CdZnTe epitaxial thick film by close spaced sublimation for radiation detector

Sihong Wu, Gangqiang Zha, Kun Cao, Jinghua Fu, Yang Li, Y. Wang, W. Jie, Tingting Tan

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

High quality CdZnTe epitaxial thick films with thickness of about 1.1 mm were grown on GaAs (001) substrates by close spaced sublimation method (CSS). The dislocation density of the CdZnTe epitaxial films were found to be approximately 1.05 × 105 cm−2, and the full width at half maximum intensity of X-ray rocking curve is 166 arcsec. The mobility-lifetime (μτ) product and mobility (μ) of electrons were measured to be 1.0 × 10−3 cm2V−1 and 750 cm2 V−1s−1, respectively. The CdZnTe thick film detector has an energy resolution of 2.2% for 241Am@5.49 MeV alpha particles and 31% for 241Am@59.5 KeV gamma-ray.

Original languageEnglish
Article number108852
JournalVacuum
Volume168
DOIs
StatePublished - Oct 2019

Keywords

  • CdZnTe
  • Close spaced sublimation
  • Epitaxial film
  • Radiation detector

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