The effect of technology parameters on Al doped β-SiC powders by combustion synthesis

The Al doped SiC powders have been prepared by combustion synthesis in 0.1MPa nitrogen atmosphere under different body pressure, using silicon (Si) and carbon black (C) powders as raw materials, aluminum (Al) as doping source and polytetrafluoroethylene (PTFE) as additive. The prepared powders have been characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive spectra (EDS). The microwave dielectric property of prepared powders has been measured in the frequency range of 8.2-12.4GHz. Results show the lattice parameter and dielectric property of prepared powders decrease with body pressure increasing. The synthesized mechanism and effect of Al doping on dielectric property of SiC powder have been discussed.