The effect of Cu doping concentration on resistive switching of HfO                         2                          film

Tingting Guo; Tingting Tan; Zhengtang Liu

doi:10.1016/j.apsusc.2015.05.176

The effect of Cu doping concentration on resistive switching of HfO ₂ film

Tingting Guo, Tingting Tan, Zhengtang Liu

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The Cu-doped and undoped HfO ₂ films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO ₂ film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO ₂ :Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO ₂ film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO ₂ film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO ₂ :Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.

Original language	English
Pages (from-to)	704-708
Number of pages	5
Journal	Applied Surface Science
Volume	351
DOIs	https://doi.org/10.1016/j.apsusc.2015.05.176
State	Published - 1 Oct 2015

Keywords

Doping concentration
HfO :Cu film
Mechanism
Resistive switching

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title = " The effect of Cu doping concentration on resistive switching of HfO 2 film ",

abstract = " The Cu-doped and undoped HfO 2 films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO 2 film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO 2 :Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO 2 film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO 2 film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO 2 :Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.",

keywords = "Doping concentration, HfO :Cu film, Mechanism, Resistive switching",

author = "Tingting Guo and Tingting Tan and Zhengtang Liu",

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doi = "10.1016/j.apsusc.2015.05.176",

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volume = "351",

pages = "704--708",

journal = "Applied Surface Science",

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T1 - The effect of Cu doping concentration on resistive switching of HfO 2 film

AU - Guo, Tingting

AU - Tan, Tingting

AU - Liu, Zhengtang

PY - 2015/10/1

Y1 - 2015/10/1

N2 - The Cu-doped and undoped HfO 2 films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO 2 film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO 2 :Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO 2 film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO 2 film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO 2 :Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.

AB - The Cu-doped and undoped HfO 2 films were fabricated and the effect of Cu doping concentration on resistive switching (RS) of HfO 2 film was demonstrated. The X-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical bonding states of Cu in HfO 2 :Cu film. The improved RS behaviors in terms of ON/OFF ratio and switching parameters were observed for Cu-doped HfO 2 film with bipolar resistive switching (BRS) behavior. With the increase of Cu doping concentration, the 9.7% Cu-doped HfO 2 film showed both BRS and unipolar resistive switching (URS) behaviors with large operating voltages. The space charge limited current (SCLC) effect was proposed to interpret the switching mechanism of HfO 2 :Cu films with BRS behavior and the URS behavior can be explained by the migration of Cu ions.

KW - Doping concentration

KW - HfO :Cu film

KW - Mechanism

KW - Resistive switching

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DO - 10.1016/j.apsusc.2015.05.176

M3 - 文章

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SN - 0169-4332

VL - 351

SP - 704

EP - 708

JO - Applied Surface Science

JF - Applied Surface Science

ER -

The effect of Cu doping concentration on resistive switching of HfO ₂ film

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Keywords

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