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Temperature Effect on Self-Oscillation Thresholds in Thermal-Piezoresistive MEMS Resonators

  • Haojie Li
  • , Chenhao Yang
  • , Geer Teng
  • , Wei Zhang
  • , Xiaoying Li
  • , Hemin Zhang
  • Northwestern Polytechnical University Xian

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper investigates the temperature dependence of the self-oscillation threshold current in a thermal-actuation and piezoresistive-detection resonator. Temperature-induced stress is shown to alter the device's resistance and thermal properties, which in turn govern the minimum power required for self-oscillation. The observed non-monotonic variation of the threshold current is attributed to the discrepancy between the temperature responses of the threshold power and the device resistance. The analysis of this phenomenon provides critical insights for the design of low-power and environmentally robust resonant sensors.

Original languageEnglish
Title of host publication2026 IEEE 21st International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2026
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages244-247
Number of pages4
ISBN (Electronic)9798319519351
DOIs
StatePublished - 2026
Event21st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2026 - Chengdu, China
Duration: 17 Apr 202621 Apr 2026

Publication series

Name2026 IEEE 21st International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2026

Conference

Conference21st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2026
Country/TerritoryChina
CityChengdu
Period17/04/2621/04/26

Keywords

  • piezoresistive-detection
  • resonator
  • temperature dependence
  • thermal-actuation
  • threshold current

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