Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Yaxu Gu; Wanqi Jie; Linglong Li; Yadong Xu; Yaodong Yang; Jie Ren; Gangqiang Zha; Tao Wang; Lingyan Xu; Yihui He; Shouzhi Xi

doi:10.1016/j.micron.2016.06.001

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Yaxu Gu
, Wanqi Jie
, Linglong Li
, Yadong Xu
, Yaodong Yang
, Jie Ren
, Gangqiang Zha
, Tao Wang
, Lingyan Xu
, Yihui He
, Shouzhi Xi

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian
Frontier Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

Original language	English
Pages (from-to)	48-53
Number of pages	6
Journal	Micron
Volume	88
DOIs	https://doi.org/10.1016/j.micron.2016.06.001
State	Published - 1 Sep 2016

Keywords

Bias dependent
CdZnTe
Electrical property
Kelvin probe force microscopy
Te inclusion

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10.1016/j.micron.2016.06.001

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@article{a8511510609543ee86e76dc7135ba2e4,

title = "Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy",

abstract = "To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.",

keywords = "Bias dependent, CdZnTe, Electrical property, Kelvin probe force microscopy, Te inclusion",

author = "Yaxu Gu and Wanqi Jie and Linglong Li and Yadong Xu and Yaodong Yang and Jie Ren and Gangqiang Zha and Tao Wang and Lingyan Xu and Yihui He and Shouzhi Xi",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = sep,

day = "1",

doi = "10.1016/j.micron.2016.06.001",

language = "英语",

volume = "88",

pages = "48--53",

journal = "Micron",

issn = "0968-4328",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

AU - Gu, Yaxu

AU - Jie, Wanqi

AU - Li, Linglong

AU - Xu, Yadong

AU - Yang, Yaodong

AU - Ren, Jie

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Xu, Lingyan

AU - He, Yihui

AU - Xi, Shouzhi

PY - 2016/9/1

Y1 - 2016/9/1

N2 - To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

AB - To understand the effects of tellurium (Te) inclusions on the device performance of CdZnTe radiation detectors, the perturbation of the electrical field in and around Te inclusions was studied in CdZnTe single crystals via Kelvin probe force microscopy (KPFM). Te inclusions were proved to act as lower potential centers with respect to surrounding CdZnTe matrix. Based on the KPFM results, the energy band diagram at the Te/CdZnTe interface was established, and the bias-dependent effects of Te inclusion on carrier transportation is discussed.

KW - Bias dependent

KW - CdZnTe

KW - Electrical property

KW - Kelvin probe force microscopy

KW - Te inclusion

UR - https://www.scopus.com/pages/publications/84976904610

U2 - 10.1016/j.micron.2016.06.001

DO - 10.1016/j.micron.2016.06.001

M3 - 文章

AN - SCOPUS:84976904610

SN - 0968-4328

VL - 88

SP - 48

EP - 53

JO - Micron

JF - Micron

ER -

Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force microscopy

Abstract

Keywords

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