Abstract
The effects of Ti 3SiC 2 doping on lattice parameter (a), microstructure, critical temperature (T c) and critical current density (J c) of MgB 2 superconductors were studied. Carbon substitution for boron could be confirmed by the shrinkage of the lattice parameter a with increasing of Ti 3SiC 2 doping level. A reduction of T c from 37.15 K to 36.55 K with increasing of Ti 3SiC 2 doping was observed. The J c values were determined by M-H hysteresis loops. Results show that in low magnetic field region, the J c value for the undoped sample is higher than those for the doped samples. However, with the increase of the magnetic field, the J c for the properly doped samples will be enhanced.
| Original language | English |
|---|---|
| Pages (from-to) | 1135-1138 |
| Number of pages | 4 |
| Journal | Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering |
| Volume | 41 |
| Issue number | 7 |
| State | Published - Jul 2012 |
Keywords
- MgB bulks
- Superconducting property
- Ti SiC doping
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