Abstract
The surface chemical polishing technique of HgInTe (MIT) wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however, was eroded very fast and had a rougher surface.
| Original language | English |
|---|---|
| Pages (from-to) | 535-538 |
| Number of pages | 4 |
| Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
| Volume | 38 |
| Issue number | 2 |
| State | Published - Apr 2009 |
Keywords
- Chemical polishing
- Erosion rate
- HgInTe
- Surface roughness