Study on PL and electrical properties of Au/p-CZT crystal

Qiang Li; Wan Qi Jie; Li Fu; Xiao Qin Wang; Gang Qiang Zha; Dong Mei Zeng; Ge Yang

Study on PL and electrical properties of Au/p-CZT crystal

Qiang Li, Wan Qi Jie, Li Fu, Xiao Qin Wang, Gang Qiang Zha, Dong Mei Zeng, Ge Yang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

By comparing the photoluminescence (PL) spectra of etching and passivation surface of the p-CZT, it is confirmed that using NH₄F/H₂O₂ as agent, the passivation treatment minimized the surface trap state density and decreased the deep level defects related to recombination of Cd vacancies. I-V and C-V characteristics of Au/p-CZT contacts with different surface treatments were measured by Agilent 4339B high resistance meter and Agilent 4294A precision impedance analyzer, respectively. It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current. The major reason was that passivation increased the barrier height of Au/p-CZT contacts and the possibility for electrons through the TeO₂ oxide was smaller.

Original language	English
Pages (from-to)	669-672+659
Journal	Rengong Jingti Xuebao/Journal of Synthetic Crystals
Volume	35
Issue number	3
State	Published - Jun 2006

Keywords

C-V characteristic
CZT crystal
I-V characteristic
Photoluminescence

Cite this

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title = "Study on PL and electrical properties of Au/p-CZT crystal",

abstract = "By comparing the photoluminescence (PL) spectra of etching and passivation surface of the p-CZT, it is confirmed that using NH4F/H2O2 as agent, the passivation treatment minimized the surface trap state density and decreased the deep level defects related to recombination of Cd vacancies. I-V and C-V characteristics of Au/p-CZT contacts with different surface treatments were measured by Agilent 4339B high resistance meter and Agilent 4294A precision impedance analyzer, respectively. It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current. The major reason was that passivation increased the barrier height of Au/p-CZT contacts and the possibility for electrons through the TeO2 oxide was smaller.",

keywords = "C-V characteristic, CZT crystal, I-V characteristic, Photoluminescence",

author = "Qiang Li and Jie, {Wan Qi} and Li Fu and Wang, {Xiao Qin} and Zha, {Gang Qiang} and Zeng, {Dong Mei} and Ge Yang",

year = "2006",

month = jun,

language = "英语",

volume = "35",

pages = "669--672+659",

journal = "Rengong Jingti Xuebao/Journal of Synthetic Crystals",

issn = "1000-985X",

publisher = "Chinese Ceramic Society",

number = "3",

}

TY - JOUR

T1 - Study on PL and electrical properties of Au/p-CZT crystal

AU - Li, Qiang

AU - Jie, Wan Qi

AU - Fu, Li

AU - Wang, Xiao Qin

AU - Zha, Gang Qiang

AU - Zeng, Dong Mei

AU - Yang, Ge

PY - 2006/6

Y1 - 2006/6

N2 - By comparing the photoluminescence (PL) spectra of etching and passivation surface of the p-CZT, it is confirmed that using NH4F/H2O2 as agent, the passivation treatment minimized the surface trap state density and decreased the deep level defects related to recombination of Cd vacancies. I-V and C-V characteristics of Au/p-CZT contacts with different surface treatments were measured by Agilent 4339B high resistance meter and Agilent 4294A precision impedance analyzer, respectively. It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current. The major reason was that passivation increased the barrier height of Au/p-CZT contacts and the possibility for electrons through the TeO2 oxide was smaller.

AB - By comparing the photoluminescence (PL) spectra of etching and passivation surface of the p-CZT, it is confirmed that using NH4F/H2O2 as agent, the passivation treatment minimized the surface trap state density and decreased the deep level defects related to recombination of Cd vacancies. I-V and C-V characteristics of Au/p-CZT contacts with different surface treatments were measured by Agilent 4339B high resistance meter and Agilent 4294A precision impedance analyzer, respectively. It was shown that etching and passivation could increase the barrier height of the Au/p-CZT and decrease the leakage current. The major reason was that passivation increased the barrier height of Au/p-CZT contacts and the possibility for electrons through the TeO2 oxide was smaller.

KW - C-V characteristic

KW - CZT crystal

KW - I-V characteristic

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=33746546866&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:33746546866

SN - 1000-985X

VL - 35

SP - 669-672+659

JO - Rengong Jingti Xuebao/Journal of Synthetic Crystals

JF - Rengong Jingti Xuebao/Journal of Synthetic Crystals

IS - 3

ER -

Study on PL and electrical properties of Au/p-CZT crystal

Abstract

Keywords

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