Abstract
Photoluminescence (PL) spectroscopy was carried out on CdZnTe crystal grown by Modified Vertical Bridgman method, with temperature from 10 K to 150 K. Abnormal temperature dependent PL intensity were observed from 30 K to 50 K, which is the so-called "negative thermal quenching". Three non-radiative processes and one negative thermal quenching process were identified. The difference of XRD spectra between CdZnTe crystals with and without negative thermal quenching behaviors gives a possible explanation on its origin.
| Original language | English |
|---|---|
| Pages (from-to) | 106-109 |
| Number of pages | 4 |
| Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
| Volume | 39 |
| Issue number | 1 |
| State | Published - Feb 2010 |
Keywords
- CdZnTe
- Negative thermal quenching
- PL spectroscopy
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