Abstract
The compound semiconductor GaTe was grown by Bridgman method. The crystal structure of GaTe powder and bulk were charactereized by XRD, GaTe thin film and two-dimensional nano layer were analyzed by TEM, and the cleavage surface of GaTe was determined by crystal orientation instrument. The results show that the structure of GaTe thin film and two-dimensional nano layer belong to monoclinic and hexagon, respectively, which correspond to different cleavage surface.
| Original language | English |
|---|---|
| Pages (from-to) | 3059-3062 |
| Number of pages | 4 |
| Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
| Volume | 43 |
| Issue number | 12 |
| State | Published - 1 Dec 2014 |
Keywords
- Bridgman method
- Cleavage surface
- GaTe
- Two-dimensional nano layer
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