Study on a co-doped CdZnTe crystal containing Yb and In

Tao Wang; Xin Ai; Ziang Yin; Qinghua Zhao; Boru Zhou; Fan Yang; Lingyan Xu; Gangqiang Zha; Wanqi Jie

doi:10.1039/c8ce02032a

Study on a co-doped CdZnTe crystal containing Yb and In

Tao Wang
, Xin Ai
, Ziang Yin
, Qinghua Zhao
, Boru Zhou
, Fan Yang
, Lingyan Xu
, Gangqiang Zha
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The influence of ytterbium and indium on a co-doped CdZnTe (CZT:(In,Yb)) crystal grown using the vertical Bridgman method was investigated. A new energy level, mainly derived from [YB_Cd]⁺, was identified from the photoluminescence (PL) spectra. The trap density of Cd vacancies was obviously reduced along with an increased number of tellurium antisites according to thermally stimulated current (TSC) measurements. A variation in the intensity ratio for the A⁰X/D⁰X peak was observed in the PL spectra compared with an indium doped CdZnTe (CZT:In) crystal. Time-of-flight (TOF) results showed that the electron mobility was determined to be 1148 cm² Vs⁻¹, which is about 26% higher than that of CZT:In. The major cause was considered to be electrical compensation and the gettering process, where the concentrations of Cd vacancies and acceptor impurities were reduced, leading to an enhancement in the mobility.

Original language	English
Pages (from-to)	2620-2625
Number of pages	6
Journal	CrystEngComm
Volume	21
Issue number	16
DOIs	https://doi.org/10.1039/c8ce02032a
State	Published - 2019

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@article{27d16c5eade14e0d9316a48f5ee9f552,

title = "Study on a co-doped CdZnTe crystal containing Yb and In",

abstract = "The influence of ytterbium and indium on a co-doped CdZnTe (CZT:(In,Yb)) crystal grown using the vertical Bridgman method was investigated. A new energy level, mainly derived from [YBCd]+, was identified from the photoluminescence (PL) spectra. The trap density of Cd vacancies was obviously reduced along with an increased number of tellurium antisites according to thermally stimulated current (TSC) measurements. A variation in the intensity ratio for the A0X/D0X peak was observed in the PL spectra compared with an indium doped CdZnTe (CZT:In) crystal. Time-of-flight (TOF) results showed that the electron mobility was determined to be 1148 cm2 Vs−1, which is about 26\% higher than that of CZT:In. The major cause was considered to be electrical compensation and the gettering process, where the concentrations of Cd vacancies and acceptor impurities were reduced, leading to an enhancement in the mobility.",

author = "Tao Wang and Xin Ai and Ziang Yin and Qinghua Zhao and Boru Zhou and Fan Yang and Lingyan Xu and Gangqiang Zha and Wanqi Jie",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/c8ce02032a",

language = "英语",

volume = "21",

pages = "2620--2625",

journal = "CrystEngComm",

issn = "1466-8033",

publisher = "Royal Society of Chemistry",

number = "16",

}

TY - JOUR

T1 - Study on a co-doped CdZnTe crystal containing Yb and In

AU - Wang, Tao

AU - Ai, Xin

AU - Yin, Ziang

AU - Zhao, Qinghua

AU - Zhou, Boru

AU - Yang, Fan

AU - Xu, Lingyan

AU - Zha, Gangqiang

AU - Jie, Wanqi

PY - 2019

Y1 - 2019

N2 - The influence of ytterbium and indium on a co-doped CdZnTe (CZT:(In,Yb)) crystal grown using the vertical Bridgman method was investigated. A new energy level, mainly derived from [YBCd]+, was identified from the photoluminescence (PL) spectra. The trap density of Cd vacancies was obviously reduced along with an increased number of tellurium antisites according to thermally stimulated current (TSC) measurements. A variation in the intensity ratio for the A0X/D0X peak was observed in the PL spectra compared with an indium doped CdZnTe (CZT:In) crystal. Time-of-flight (TOF) results showed that the electron mobility was determined to be 1148 cm2 Vs−1, which is about 26% higher than that of CZT:In. The major cause was considered to be electrical compensation and the gettering process, where the concentrations of Cd vacancies and acceptor impurities were reduced, leading to an enhancement in the mobility.

AB - The influence of ytterbium and indium on a co-doped CdZnTe (CZT:(In,Yb)) crystal grown using the vertical Bridgman method was investigated. A new energy level, mainly derived from [YBCd]+, was identified from the photoluminescence (PL) spectra. The trap density of Cd vacancies was obviously reduced along with an increased number of tellurium antisites according to thermally stimulated current (TSC) measurements. A variation in the intensity ratio for the A0X/D0X peak was observed in the PL spectra compared with an indium doped CdZnTe (CZT:In) crystal. Time-of-flight (TOF) results showed that the electron mobility was determined to be 1148 cm2 Vs−1, which is about 26% higher than that of CZT:In. The major cause was considered to be electrical compensation and the gettering process, where the concentrations of Cd vacancies and acceptor impurities were reduced, leading to an enhancement in the mobility.

UR - https://www.scopus.com/pages/publications/85064392958

U2 - 10.1039/c8ce02032a

DO - 10.1039/c8ce02032a

M3 - 文章

AN - SCOPUS:85064392958

SN - 1466-8033

VL - 21

SP - 2620

EP - 2625

JO - CrystEngComm

JF - CrystEngComm

IS - 16

ER -

Study on a co-doped CdZnTe crystal containing Yb and In

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