Space-Charge Manipulation Under Sub-bandgap Illumination  in Detector-Grade CdZnTe

Rongrong Guo; Wanqi Jie; Yadong Xu; Gangqiang Zha; Tao Wang; Yun Lin; Mengmeng Zhang; Zhuotong Du

doi:10.1007/s11664-015-3835-0

Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe

Rongrong Guo, Wanqi Jie, Yadong Xu, Gangqiang Zha, Tao Wang, Yun Lin, Mengmeng Zhang, Zhuotong Du

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Review article › peer-review

5 Scopus citations

Abstract

The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, ²⁴¹Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency.

Original language	English
Pages (from-to)	3229-3235
Number of pages	7
Journal	Journal of Electronic Materials
Volume	44
Issue number	10
DOIs	https://doi.org/10.1007/s11664-015-3835-0
State	Published - 5 Oct 2015

Keywords

CdZnTe
deep-level defects
space charge
sub-bandgap illumination

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10.1007/s11664-015-3835-0

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title = "Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe",

abstract = "The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, 241Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency.",

keywords = "CdZnTe, deep-level defects, space charge, sub-bandgap illumination",

author = "Rongrong Guo and Wanqi Jie and Yadong Xu and Gangqiang Zha and Tao Wang and Yun Lin and Mengmeng Zhang and Zhuotong Du",

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T1 - Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe

AU - Guo, Rongrong

AU - Jie, Wanqi

AU - Xu, Yadong

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Lin, Yun

AU - Zhang, Mengmeng

AU - Du, Zhuotong

PY - 2015/10/5

Y1 - 2015/10/5

N2 - The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, 241Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency.

AB - The effects of sub-bandgap illumination on the charge transport process and detector performance were experimentally studied in detector-grade CdZnTe. Based on the resulting bulk resistivity and photocurrent response under sub-bandgap illumination, the variation of the deep-level occupation fraction was identified according to a modified Shockley–Read–Hall model. From laser-beam-induced transient current measurements, a decrease of negative space-charge density and consequently flattening of the electric field distribution were found under external sub-bandgap illumination, demonstrating a reduction of the active trap concentration. Furthermore, 241Am gamma-ray spectroscopy response measurements confirmed that simultaneous incidence of sub-bandgap light could significantly improve CdZnTe detector energy resolution and charge collection efficiency.

KW - CdZnTe

KW - deep-level defects

KW - space charge

KW - sub-bandgap illumination

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M3 - 文献综述

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SN - 0361-5235

VL - 44

SP - 3229

EP - 3235

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe

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Keywords

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