Single crystal-single crystal bonding of langasite exhibited high strength of 23.28 MPa

Guangyao Pei; Binghe Ma; Tao Ye; Zhonggang Zhang; Keli Zhao; Jinjun Deng; Seeram Ramakrishna; Jian Luo

doi:10.1016/j.jmst.2023.03.030

Single crystal-single crystal bonding of langasite exhibited high strength of 23.28 MPa

Guangyao Pei, Binghe Ma, Tao Ye, Zhonggang Zhang, Keli Zhao, Jinjun Deng, Seeram Ramakrishna, Jian Luo

School of Microelectronics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Langasite (LGS, La₃Ga₅SiO₁₄) is a promising material in high-temperature piezoelectric devices due to its excellent thermal stability, piezoelectricity, and electrical property. A major challenge in the development of LGS-based devices is to form high-strength bonding of the brittle LGS. Here, we report that the single crystal-single crystal (dual-SC) bonding of LGS is realized through thermal activation under a low compression of 50 kPa for the first time. A record bonding strength of 23.28 MPa is achieved within the dual-SC bonded LGS/LGS structure (with a high bonding ratio exceeding 93%), which is 5 times higher than that of the recent reported LGS/LGS bonding structure (in which a relatively fragile amorphous interface layer is formed between the two LGS samples). The smooth and void-free dual-SC bonding interface of LGS is verified via the cross-sectional transmission electron microscopy (TEM) observations.

Original language	English
Pages (from-to)	139-147
Number of pages	9
Journal	Journal of Materials Science and Technology
Volume	160
DOIs	https://doi.org/10.1016/j.jmst.2023.03.030
State	Published - 10 Oct 2023

Keywords

High-strength
Langasite
Low compression
Single crystal-single crystal bonding
Thermal activation

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title = "Single crystal-single crystal bonding of langasite exhibited high strength of 23.28 MPa",

abstract = "Langasite (LGS, La3Ga5SiO14) is a promising material in high-temperature piezoelectric devices due to its excellent thermal stability, piezoelectricity, and electrical property. A major challenge in the development of LGS-based devices is to form high-strength bonding of the brittle LGS. Here, we report that the single crystal-single crystal (dual-SC) bonding of LGS is realized through thermal activation under a low compression of 50 kPa for the first time. A record bonding strength of 23.28 MPa is achieved within the dual-SC bonded LGS/LGS structure (with a high bonding ratio exceeding 93%), which is 5 times higher than that of the recent reported LGS/LGS bonding structure (in which a relatively fragile amorphous interface layer is formed between the two LGS samples). The smooth and void-free dual-SC bonding interface of LGS is verified via the cross-sectional transmission electron microscopy (TEM) observations.",

keywords = "High-strength, Langasite, Low compression, Single crystal-single crystal bonding, Thermal activation",

author = "Guangyao Pei and Binghe Ma and Tao Ye and Zhonggang Zhang and Keli Zhao and Jinjun Deng and Seeram Ramakrishna and Jian Luo",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = oct,

day = "10",

doi = "10.1016/j.jmst.2023.03.030",

language = "英语",

volume = "160",

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TY - JOUR

T1 - Single crystal-single crystal bonding of langasite exhibited high strength of 23.28 MPa

AU - Pei, Guangyao

AU - Ma, Binghe

AU - Ye, Tao

AU - Zhang, Zhonggang

AU - Zhao, Keli

AU - Deng, Jinjun

AU - Ramakrishna, Seeram

AU - Luo, Jian

PY - 2023/10/10

Y1 - 2023/10/10

N2 - Langasite (LGS, La3Ga5SiO14) is a promising material in high-temperature piezoelectric devices due to its excellent thermal stability, piezoelectricity, and electrical property. A major challenge in the development of LGS-based devices is to form high-strength bonding of the brittle LGS. Here, we report that the single crystal-single crystal (dual-SC) bonding of LGS is realized through thermal activation under a low compression of 50 kPa for the first time. A record bonding strength of 23.28 MPa is achieved within the dual-SC bonded LGS/LGS structure (with a high bonding ratio exceeding 93%), which is 5 times higher than that of the recent reported LGS/LGS bonding structure (in which a relatively fragile amorphous interface layer is formed between the two LGS samples). The smooth and void-free dual-SC bonding interface of LGS is verified via the cross-sectional transmission electron microscopy (TEM) observations.

AB - Langasite (LGS, La3Ga5SiO14) is a promising material in high-temperature piezoelectric devices due to its excellent thermal stability, piezoelectricity, and electrical property. A major challenge in the development of LGS-based devices is to form high-strength bonding of the brittle LGS. Here, we report that the single crystal-single crystal (dual-SC) bonding of LGS is realized through thermal activation under a low compression of 50 kPa for the first time. A record bonding strength of 23.28 MPa is achieved within the dual-SC bonded LGS/LGS structure (with a high bonding ratio exceeding 93%), which is 5 times higher than that of the recent reported LGS/LGS bonding structure (in which a relatively fragile amorphous interface layer is formed between the two LGS samples). The smooth and void-free dual-SC bonding interface of LGS is verified via the cross-sectional transmission electron microscopy (TEM) observations.

KW - High-strength

KW - Langasite

KW - Low compression

KW - Single crystal-single crystal bonding

KW - Thermal activation

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U2 - 10.1016/j.jmst.2023.03.030

DO - 10.1016/j.jmst.2023.03.030

M3 - 文章

AN - SCOPUS:85156119489

SN - 1005-0302

VL - 160

SP - 139

EP - 147

JO - Journal of Materials Science and Technology

JF - Journal of Materials Science and Technology

ER -

Single crystal-single crystal bonding of langasite exhibited high strength of 23.28 MPa

Abstract

Keywords

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