Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Tingting Tan; Yihang Du; Yaling Sun; Hua Zhang; Ai Cao; Gangqiang Zha

doi:10.1007/s10854-019-01712-3

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

Tingting Tan, Yihang Du, Yaling Sun, Hua Zhang, Ai Cao, Gangqiang Zha

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The novel amorphous strontium oxide (α-SrO) resistive random access memory (RRAM) device based on the ITO/α-SrO/Pt sandwich-like structure was presented. Photosensitivity to ultraviolet (UV) light for α-SrO based RRAM was investigated. The resistive switching characteristics were affected through the modification of the number of oxygen vacancy by the UV irradiation. Ultraviolet light-assisted oxygen vacancy manipulation in the SrO film is an effect method to adjust device resistive switching behavior. The current conduction mechanism of the SrO-based RRAM device was changed from the Schottky emission mechanism to Poole-Frankel mechanism after the UV light illumination. In order to unveil the stability of the SrO samples after the UV light illumination, the physical models for different switching processes were proposed. Additionally, the improved switching uniformity via UV light irradiation gives physical insight into designing resistive memory devices.

Original language	English
Pages (from-to)	13445-13453
Number of pages	9
Journal	Journal of Materials Science: Materials in Electronics
Volume	30
Issue number	14
DOIs	https://doi.org/10.1007/s10854-019-01712-3
State	Published - 30 Jul 2019

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@article{2dc32a7de78546bd867b15ca4bc7d75a,

title = "Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory",

abstract = "The novel amorphous strontium oxide (α-SrO) resistive random access memory (RRAM) device based on the ITO/α-SrO/Pt sandwich-like structure was presented. Photosensitivity to ultraviolet (UV) light for α-SrO based RRAM was investigated. The resistive switching characteristics were affected through the modification of the number of oxygen vacancy by the UV irradiation. Ultraviolet light-assisted oxygen vacancy manipulation in the SrO film is an effect method to adjust device resistive switching behavior. The current conduction mechanism of the SrO-based RRAM device was changed from the Schottky emission mechanism to Poole-Frankel mechanism after the UV light illumination. In order to unveil the stability of the SrO samples after the UV light illumination, the physical models for different switching processes were proposed. Additionally, the improved switching uniformity via UV light irradiation gives physical insight into designing resistive memory devices.",

author = "Tingting Tan and Yihang Du and Yaling Sun and Hua Zhang and Ai Cao and Gangqiang Zha",

note = "Publisher Copyright: {\textcopyright} 2019, Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2019",

month = jul,

day = "30",

doi = "10.1007/s10854-019-01712-3",

language = "英语",

volume = "30",

pages = "13445--13453",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "14",

}

TY - JOUR

T1 - Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

AU - Tan, Tingting

AU - Du, Yihang

AU - Sun, Yaling

AU - Zhang, Hua

AU - Cao, Ai

AU - Zha, Gangqiang

PY - 2019/7/30

Y1 - 2019/7/30

N2 - The novel amorphous strontium oxide (α-SrO) resistive random access memory (RRAM) device based on the ITO/α-SrO/Pt sandwich-like structure was presented. Photosensitivity to ultraviolet (UV) light for α-SrO based RRAM was investigated. The resistive switching characteristics were affected through the modification of the number of oxygen vacancy by the UV irradiation. Ultraviolet light-assisted oxygen vacancy manipulation in the SrO film is an effect method to adjust device resistive switching behavior. The current conduction mechanism of the SrO-based RRAM device was changed from the Schottky emission mechanism to Poole-Frankel mechanism after the UV light illumination. In order to unveil the stability of the SrO samples after the UV light illumination, the physical models for different switching processes were proposed. Additionally, the improved switching uniformity via UV light irradiation gives physical insight into designing resistive memory devices.

AB - The novel amorphous strontium oxide (α-SrO) resistive random access memory (RRAM) device based on the ITO/α-SrO/Pt sandwich-like structure was presented. Photosensitivity to ultraviolet (UV) light for α-SrO based RRAM was investigated. The resistive switching characteristics were affected through the modification of the number of oxygen vacancy by the UV irradiation. Ultraviolet light-assisted oxygen vacancy manipulation in the SrO film is an effect method to adjust device resistive switching behavior. The current conduction mechanism of the SrO-based RRAM device was changed from the Schottky emission mechanism to Poole-Frankel mechanism after the UV light illumination. In order to unveil the stability of the SrO samples after the UV light illumination, the physical models for different switching processes were proposed. Additionally, the improved switching uniformity via UV light irradiation gives physical insight into designing resistive memory devices.

UR - http://www.scopus.com/inward/record.url?scp=85068788544&partnerID=8YFLogxK

U2 - 10.1007/s10854-019-01712-3

DO - 10.1007/s10854-019-01712-3

M3 - 文章

AN - SCOPUS:85068788544

SN - 0957-4522

VL - 30

SP - 13445

EP - 13453

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 14

ER -

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory

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