Abstract
CdZnTe crystals grown by modified vertical Bridgman method were cutted into pieces with the dimensions of 12 mm×7 mm×2.5 mm along specifical orientation. The CdZnTe planar detector was fabricated through a series of processing: grinding, mechanical polishing, chemical polishing, electrode preparation, passivation, fast annealing, and so on. The emphasis was given on the evaluation of electrode properties before and after fast annealing. The X-ray spectroscopy response of the Au/CdZnTe/Al planar detector was obtained at room temperature under a bias of 350 V, irradiated with uncollimated 241 Am isotope with the energy resolution of 3.95% (2.35 keV FWHM).
| Original language | English |
|---|---|
| Pages (from-to) | 620-624 |
| Number of pages | 5 |
| Journal | Rengong Jingti Xuebao/Journal of Synthetic Crystals |
| Volume | 38 |
| Issue number | 3 |
| State | Published - Jun 2009 |
Keywords
- CdZnTe
- Energy resolution
- Fast annealing
- Planar detector