Relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC

Dong Han; Sheng Ru Qiao; Mei Li; Guo Feng Lu; Jun Zhang

doi:10.1016/j.carbon.2006.01.031

Relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC

Dong Han, Sheng Ru Qiao, Mei Li, Guo Feng Lu, Jun Zhang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC, was analyzed. The 2D-C/SiC composite is fabricated by chemical vapor infiltration of SiC into preform. The preform consists of a stack of cloth which is woven with T300 PAN carbon fiber in two orthogonal directions. It was observed that the weight change is the most severe at 900° C, followed by that at 1200 °C, and by that at 600 °C after thermo-exposure. It was also observed that after 10 h exposure, the change of modulus at 600° C exceeds that at 1200°C.

Original language	English
Pages (from-to)	2354-2356
Number of pages	3
Journal	Carbon
Volume	44
Issue number	11
DOIs	https://doi.org/10.1016/j.carbon.2006.01.031
State	Published - Sep 2006

Keywords

Carbon composites
Mechanical properties
Oxidation

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10.1016/j.carbon.2006.01.031

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title = "Relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC",

abstract = "The relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC, was analyzed. The 2D-C/SiC composite is fabricated by chemical vapor infiltration of SiC into preform. The preform consists of a stack of cloth which is woven with T300 PAN carbon fiber in two orthogonal directions. It was observed that the weight change is the most severe at 900° C, followed by that at 1200 °C, and by that at 600 °C after thermo-exposure. It was also observed that after 10 h exposure, the change of modulus at 600° C exceeds that at 1200°C.",

keywords = "Carbon composites, Mechanical properties, Oxidation",

author = "Dong Han and Qiao, {Sheng Ru} and Mei Li and Lu, {Guo Feng} and Jun Zhang",

year = "2006",

month = sep,

doi = "10.1016/j.carbon.2006.01.031",

language = "英语",

volume = "44",

pages = "2354--2356",

journal = "Carbon",

issn = "0008-6223",

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T1 - Relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC

AU - Han, Dong

AU - Qiao, Sheng Ru

AU - Li, Mei

AU - Lu, Guo Feng

AU - Zhang, Jun

PY - 2006/9

Y1 - 2006/9

N2 - The relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC, was analyzed. The 2D-C/SiC composite is fabricated by chemical vapor infiltration of SiC into preform. The preform consists of a stack of cloth which is woven with T300 PAN carbon fiber in two orthogonal directions. It was observed that the weight change is the most severe at 900° C, followed by that at 1200 °C, and by that at 600 °C after thermo-exposure. It was also observed that after 10 h exposure, the change of modulus at 600° C exceeds that at 1200°C.

AB - The relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC, was analyzed. The 2D-C/SiC composite is fabricated by chemical vapor infiltration of SiC into preform. The preform consists of a stack of cloth which is woven with T300 PAN carbon fiber in two orthogonal directions. It was observed that the weight change is the most severe at 900° C, followed by that at 1200 °C, and by that at 600 °C after thermo-exposure. It was also observed that after 10 h exposure, the change of modulus at 600° C exceeds that at 1200°C.

KW - Carbon composites

KW - Mechanical properties

KW - Oxidation

UR - http://www.scopus.com/inward/record.url?scp=33745449429&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2006.01.031

DO - 10.1016/j.carbon.2006.01.031

M3 - 文章

AN - SCOPUS:33745449429

SN - 0008-6223

VL - 44

SP - 2354

EP - 2356

JO - Carbon

JF - Carbon

IS - 11

ER -

Relationship between weight change and modulus decrease after thermo-exposure of 2D-C/SiC

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Keywords

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