Abstract
Regular arrays of GaN nanorods have been synthesized by reacting gallium and ammonia using Au as a catalyst on a MgO single crystal substrate treated by chemical etching. They were characterized by field emission scanning electron microscopy, energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and X-ray diffraction (XRD). EDX, XRD SAED indicated that the nanorods were wurtzite single crystal GaN. We suggest that regular tactic square shape with steps on the single crystal MgO and discontinuity of the Au film may play an important role during the formation of regular arrays of GaN nanorods.
| Original language | English |
|---|---|
| Pages (from-to) | 71-76 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 236 |
| Issue number | 1-3 |
| DOIs | |
| State | Published - Mar 2002 |
Keywords
- A1. Nanostructures
- A3. Vapor phase epitaxy
- B1. Nitrides
- B2. Semiconducting III-V materials
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