Regular arrays of GaN nanorods

  • Z. J. Li
  • , X. L. Chen
  • , H. J. Li
  • , Y. P. Xu

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Regular arrays of GaN nanorods have been synthesized by reacting gallium and ammonia using Au as a catalyst on a MgO single crystal substrate treated by chemical etching. They were characterized by field emission scanning electron microscopy, energy dispersive X-ray spectroscopy (EDX), selected area electron diffraction (SAED) and X-ray diffraction (XRD). EDX, XRD SAED indicated that the nanorods were wurtzite single crystal GaN. We suggest that regular tactic square shape with steps on the single crystal MgO and discontinuity of the Au film may play an important role during the formation of regular arrays of GaN nanorods.

Original languageEnglish
Pages (from-to)71-76
Number of pages6
JournalJournal of Crystal Growth
Volume236
Issue number1-3
DOIs
StatePublished - Mar 2002

Keywords

  • A1. Nanostructures
  • A3. Vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

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