Rectifying behavior and photocarrier injection effect in BaTiO3/p-Si heterostructure

Shi Hai Yang; Ke Xin Jin; Jing Wang; Bing Cheng Luo; Chang Le Chen

doi:10.7498/aps.62.147305

Rectifying behavior and photocarrier injection effect in BaTiO₃/p-Si heterostructure

Shi Hai Yang
, Ke Xin Jin
, Jing Wang
, Bing Cheng Luo
, Chang Le Chen

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

Abstract

A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO₃/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (V_D) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO₃ film indicates that the oxygen-deficient BaTiO₃ is an n-type semiconductor.

Original language	English
Article number	147305
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	62
Issue number	14
DOIs	https://doi.org/10.7498/aps.62.147305
State	Published - 20 Jul 2013

Keywords

BaTiO film
Heterostructure
Photocarrier injection effect

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10.7498/aps.62.147305

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title = "Rectifying behavior and photocarrier injection effect in BaTiO3/p-Si heterostructure",

abstract = "A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (VD) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO3 is an n-type semiconductor.",

keywords = "BaTiO film, Heterostructure, Photocarrier injection effect",

author = "Yang, \{Shi Hai\} and Jin, \{Ke Xin\} and Jing Wang and Luo, \{Bing Cheng\} and Chen, \{Chang Le\}",

year = "2013",

month = jul,

day = "20",

doi = "10.7498/aps.62.147305",

language = "英语",

volume = "62",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "14",

}

TY - JOUR

T1 - Rectifying behavior and photocarrier injection effect in BaTiO3/p-Si heterostructure

AU - Yang, Shi Hai

AU - Jin, Ke Xin

AU - Wang, Jing

AU - Luo, Bing Cheng

AU - Chen, Chang Le

PY - 2013/7/20

Y1 - 2013/7/20

N2 - A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (VD) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO3 is an n-type semiconductor.

AB - A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (VD) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO3 is an n-type semiconductor.

KW - BaTiO film

KW - Heterostructure

KW - Photocarrier injection effect

UR - https://www.scopus.com/pages/publications/84881303259

U2 - 10.7498/aps.62.147305

DO - 10.7498/aps.62.147305

M3 - 文章

AN - SCOPUS:84881303259

SN - 1000-3290

VL - 62

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 14

M1 - 147305

ER -

Rectifying behavior and photocarrier injection effect in BaTiO₃/p-Si heterostructure

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Keywords

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