@inproceedings{e6446a1e4a4d4130bd866a7c834c5012,
title = "Properties of femtosecond laser modified atomic layer deposition SiO2 films and their resistance to nanosecond ultraviolet lasers",
abstract = "The point defects exist in the SiO2 thin films can cause high absorption, which is known to be responsible for laser induced damage of the films under high power nanosecond (ns) laser irradiation. Laser conditioning of the film is beneficial to eliminate the film defects and improve the ability of films to resist ultraviolet (UV) ns laser damage. In this article, femtosecond laser is proposed to modify the SiO2 films in the hope of improving the damage resistance of films to UV lasers. After femtosecond laser conditioning, the film properties of ALD SiO2 films were characterized in terms of surface morphology, UV laser damage induced threshold (LIDT) and optical properties. The results show that significant improvement in laser damage resistance is achieved after femtosecond laser conditioning, the LIDT of the 300 nm SiO2 thin film increased from 1.55 J/cm2 to 16.69 J/cm2, and the LIDT of the 600 nm SiO2 thin film increased from 2.01 J/cm2 to 9.46",
keywords = "SiO film, atomic layer deposition, femtosecond laser conditioning, laser induced damage threshold",
author = "Kaixin Yuan and Feng Geng and Qinghua Zhang and Yaguo Li",
note = "Publisher Copyright: {\textcopyright} 2022 SPIE.; Advanced Laser Processing and Manufacturing VI 2022 ; Conference date: 05-12-2022 Through 11-12-2022",
year = "2022",
doi = "10.1117/12.2646242",
language = "英语",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Rongshi Xiao and Minghui Hong and Jianhua Yao and Yuji Sano",
booktitle = "Advanced Laser Processing and Manufacturing VI",
}