TY - JOUR
T1 - Preparation of low-temperature sintered (Mg0.4Zn0.6)2SiO4 ceramics with CuO addition and simulation for application in microwave antennas
AU - Zhang, Miao
AU - Liu, Xiangchun
AU - Zhang, Kai
AU - Wei, Ziyao
AU - Liu, Jiahao
AU - Wang, Jiahui
AU - Zhou, Hao
AU - Bai, Yujun
AU - Chen, Danni
AU - Guan, Jiayan
AU - Zhang, Hanbi
AU - Gao, Feng
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2025.
PY - 2025/8
Y1 - 2025/8
N2 - CuO-doped (Mg0.4Zn0.6)2SiO4 ceramics were prepared by the solid-phase method. The sintering temperature of (Mg0.4Zn0.6)2SiO4 ceramics can be reduced by doping CuO. The 1 wt.% CuO-doped (Mg0.4Zn0.6)2SiO4 ceramics prepared at 1225 °C showed good dielectric (1 MHz) and microwave dielectric properties with the following parameters: ρ = 3.34 g/cm3, εr = 6.98, tanδ = 1.23 × 10–3, εr = 6.49, Q × f = 2982 GHz, and τf = −47.17 ppm/°C. On this basis, a microstrip patch antenna is designed with an operating frequency of 2.45 GHz. The simulation results show that when the resonant frequency is 2.45 GHz, the S11 parameter is −17.49 dB, the bandwidth at −10 dB is 33.9 MHz, the maximum gain is 5.34 dB, and the radiation efficiency is 83.64%.
AB - CuO-doped (Mg0.4Zn0.6)2SiO4 ceramics were prepared by the solid-phase method. The sintering temperature of (Mg0.4Zn0.6)2SiO4 ceramics can be reduced by doping CuO. The 1 wt.% CuO-doped (Mg0.4Zn0.6)2SiO4 ceramics prepared at 1225 °C showed good dielectric (1 MHz) and microwave dielectric properties with the following parameters: ρ = 3.34 g/cm3, εr = 6.98, tanδ = 1.23 × 10–3, εr = 6.49, Q × f = 2982 GHz, and τf = −47.17 ppm/°C. On this basis, a microstrip patch antenna is designed with an operating frequency of 2.45 GHz. The simulation results show that when the resonant frequency is 2.45 GHz, the S11 parameter is −17.49 dB, the bandwidth at −10 dB is 33.9 MHz, the maximum gain is 5.34 dB, and the radiation efficiency is 83.64%.
UR - https://www.scopus.com/pages/publications/105014897805
U2 - 10.1007/s10854-025-15618-w
DO - 10.1007/s10854-025-15618-w
M3 - 文章
AN - SCOPUS:105014897805
SN - 0957-4522
VL - 36
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 24
M1 - 1555
ER -