Preparation of (001) cube textured CeO₂ buffer layers on rolling-textured substrates by ion beam assisted pulsed laser deposition

An approach to deposit (001) oriented, in-plane-aligned CeO₂ buffer layer on rolling-assisted biaxially-textured nickel tapes by ion beam assisted deposition is reported. The CeO₂ films grown on the rolling-textured nickel tapes by pulsed laser deposition without ion bombardment show (111) orientation. CeO₂ films grown on the rolling-textured nickel tapes by ion beam assisted pulsed laser deposition without introducing hydrogen are (001) oriented at deposition temperature below about 380°C. The full width at half maximum of (111) φ-scan of the (001) cub textured CeO₂ films is 9°. The films growing at higher temperature are (111) orientation, no matter they are deposited with ion bombardment or without ion bombardment.