Abstract
An approach to deposit (001) oriented, in-plane-aligned CeO2 buffer layer on rolling-assisted biaxially-textured nickel tapes by ion beam assisted deposition is reported. The CeO2 films grown on the rolling-textured nickel tapes by pulsed laser deposition without ion bombardment show (111) orientation. CeO2 films grown on the rolling-textured nickel tapes by ion beam assisted pulsed laser deposition without introducing hydrogen are (001) oriented at deposition temperature below about 380°C. The full width at half maximum of (111) φ-scan of the (001) cub textured CeO2 films is 9°. The films growing at higher temperature are (111) orientation, no matter they are deposited with ion bombardment or without ion bombardment.
Original language | English |
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Pages (from-to) | 2501-2504 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 16 |
Issue number | 4 |
DOIs | |
State | Published - 1998 |
Externally published | Yes |