Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics

Huiqing Fan; Biaolin Peng; Qi Zhang

doi:10.4313/TEEM.2015.16.1.1

Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics

Huiqing Fan, Biaolin Peng, Qi Zhang

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricatedon Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phasecoexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (η = 75%, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile,giant electrocaloric effect (ECE) (ΔT = 45.3 K and ΔS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), ratherthan at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makesit a promising material for the application to cooling systems near room temperature. The giant ECE as well as highdielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FEphase transition.

Original language	English
Pages (from-to)	1-4
Number of pages	4
Journal	Transactions on Electrical and Electronic Materials
Volume	16
Issue number	1
DOIs	https://doi.org/10.4313/TEEM.2015.16.1.1
State	Published - 2015

Keywords

Dielectric tunability
Electrocaloric
Field-induced phase transition
Relaxor ferroelectrics
Sol-gel

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title = "Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics",

abstract = "(111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricatedon Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phasecoexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (η = 75\%, E = 560 kV/cm) and figure-of-merit (FOM \textasciitilde{} 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile,giant electrocaloric effect (ECE) (ΔT = 45.3 K and ΔS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), ratherthan at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makesit a promising material for the application to cooling systems near room temperature. The giant ECE as well as highdielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FEphase transition.",

keywords = "Dielectric tunability, Electrocaloric, Field-induced phase transition, Relaxor ferroelectrics, Sol-gel",

author = "Huiqing Fan and Biaolin Peng and Qi Zhang",

year = "2015",

doi = "10.4313/TEEM.2015.16.1.1",

language = "英语",

volume = "16",

pages = "1--4",

journal = "Transactions on Electrical and Electronic Materials",

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TY - JOUR

T1 - Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics

AU - Fan, Huiqing

AU - Peng, Biaolin

AU - Zhang, Qi

PY - 2015

Y1 - 2015

N2 - (111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricatedon Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phasecoexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (η = 75%, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile,giant electrocaloric effect (ECE) (ΔT = 45.3 K and ΔS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), ratherthan at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makesit a promising material for the application to cooling systems near room temperature. The giant ECE as well as highdielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FEphase transition.

AB - (111)-oriented and random oriented Pb0.8Ba0.2ZrO3 (PBZ) perovskite relaxor ferroelectric thin films were fabricatedon Pt(111)/TiOx/SiO2/Si substrate by sol-gel method. Nano-scaled antiferroelectric and ferroelectric two-phasecoexisted in both (111)-oriented and random oriented PBZ thin film. High dielectric tunability (η = 75%, E = 560 kV/cm) and figure-of-merit (FOM ~ 236) at room temperature was obtained in (111)-oriented thin film. Meanwhile,giant electrocaloric effect (ECE) (ΔT = 45.3 K and ΔS = 46.9 JK-1kg-1 at 598 kVcm-1) at room temperature (290 K), ratherthan at its Curie temperature (408 K), was observed in random oriented Pb0.8Ba0.2ZrO3 (PBZ) thin film, which makesit a promising material for the application to cooling systems near room temperature. The giant ECE as well as highdielectric tunability are attributed to the coexistence of AFE and FE phases and field-induced nano-scaled AFE to FEphase transition.

KW - Dielectric tunability

KW - Electrocaloric

KW - Field-induced phase transition

KW - Relaxor ferroelectrics

KW - Sol-gel

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DO - 10.4313/TEEM.2015.16.1.1

M3 - 文章

AN - SCOPUS:84923253015

SN - 1229-7607

VL - 16

SP - 1

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JO - Transactions on Electrical and Electronic Materials

JF - Transactions on Electrical and Electronic Materials

IS - 1

ER -

Preparation and Field-Induced Electrical Properties of Perovskite Relaxor Ferroelectrics

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