Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

Y. J. Zhang; P. X. Yan; Z. G. Wu; J. W. Xu; W. W. Zhang; X. Li; W. M. Liu; Q. J. Xue

doi:10.1116/1.1807836

Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

Y. J. Zhang, P. X. Yan, Z. G. Wu, J. W. Xu, W. W. Zhang, X. Li, W. M. Liu, Q. J. Xue

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The deposition of high-quality TiN films on silicon and stainless-steel substrates at low temperature using an improved cathode arc plasma technique was discussed. The TiN thin films were characterized by employing atomic force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy and a nanoindenter. It was observed that the microhardness of the TiN films have a high value up to 41 GPa, which was far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate and microhardness of Tin thin films were discussed.

Original language	English
Pages (from-to)	2419-2423
Number of pages	5
Journal	Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume	22
Issue number	6
DOIs	https://doi.org/10.1116/1.1807836
State	Published - Nov 2004
Externally published	Yes

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title = "Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma",

abstract = "The deposition of high-quality TiN films on silicon and stainless-steel substrates at low temperature using an improved cathode arc plasma technique was discussed. The TiN thin films were characterized by employing atomic force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy and a nanoindenter. It was observed that the microhardness of the TiN films have a high value up to 41 GPa, which was far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate and microhardness of Tin thin films were discussed.",

author = "Zhang, {Y. J.} and Yan, {P. X.} and Wu, {Z. G.} and Xu, {J. W.} and Zhang, {W. W.} and X. Li and Liu, {W. M.} and Xue, {Q. J.}",

year = "2004",

month = nov,

doi = "10.1116/1.1807836",

language = "英语",

volume = "22",

pages = "2419--2423",

journal = "Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "6",

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TY - JOUR

T1 - Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

AU - Zhang, Y. J.

AU - Yan, P. X.

AU - Wu, Z. G.

AU - Xu, J. W.

AU - Zhang, W. W.

AU - Li, X.

AU - Liu, W. M.

AU - Xue, Q. J.

PY - 2004/11

Y1 - 2004/11

N2 - The deposition of high-quality TiN films on silicon and stainless-steel substrates at low temperature using an improved cathode arc plasma technique was discussed. The TiN thin films were characterized by employing atomic force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy and a nanoindenter. It was observed that the microhardness of the TiN films have a high value up to 41 GPa, which was far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate and microhardness of Tin thin films were discussed.

AB - The deposition of high-quality TiN films on silicon and stainless-steel substrates at low temperature using an improved cathode arc plasma technique was discussed. The TiN thin films were characterized by employing atomic force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy and a nanoindenter. It was observed that the microhardness of the TiN films have a high value up to 41 GPa, which was far higher than that of TiN compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate and microhardness of Tin thin films were discussed.

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M3 - 文章

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SN - 0734-2101

VL - 22

SP - 2419

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JO - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

IS - 6

ER -

Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma

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