Point defects in CdTe

Li Yujie; Ma Guoli; Jie Wanqi

doi:10.1016/S0022-0248(03)01373-3

Point defects in CdTe

Li Yujie
, Ma Guoli
, Jie Wanqi

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian
Peking University
Yantai University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A point defect model for CdTe is presented based on a selection of potentially electrically active point defects which includes V_Cd, Cd_i, V_Te, Te_i and Te_Cd. The reaction energies and entropies of the defects were established. The effect of changing the Fermi energy with Cd partial pressure and temperature are then discussed in detail. The defect concentrations are given as functions of Cd partial pressure and the minimum attainable deviation in stoichiometry is derived. Through the analysis and the calculations, a specific detailed recipe for post-growth annealing is suggested.

Original language	English
Pages (from-to)	266-275
Number of pages	10
Journal	Journal of Crystal Growth
Volume	256
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(03)01373-3
State	Published - Sep 2003

Keywords

A1. Annealing
A1. Cd Partial pressure
A1. Defect concentrations
A1. Point defects
A1. Quasichemical equilibrium
B1. CdTe

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10.1016/S0022-0248(03)01373-3

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title = "Point defects in CdTe",

abstract = "A point defect model for CdTe is presented based on a selection of potentially electrically active point defects which includes VCd, Cdi, VTe, Tei and TeCd. The reaction energies and entropies of the defects were established. The effect of changing the Fermi energy with Cd partial pressure and temperature are then discussed in detail. The defect concentrations are given as functions of Cd partial pressure and the minimum attainable deviation in stoichiometry is derived. Through the analysis and the calculations, a specific detailed recipe for post-growth annealing is suggested.",

keywords = "A1. Annealing, A1. Cd Partial pressure, A1. Defect concentrations, A1. Point defects, A1. Quasichemical equilibrium, B1. CdTe",

author = "Li Yujie and Ma Guoli and Jie Wanqi",

year = "2003",

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doi = "10.1016/S0022-0248(03)01373-3",

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volume = "256",

pages = "266--275",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Point defects in CdTe

AU - Yujie, Li

AU - Guoli, Ma

AU - Wanqi, Jie

PY - 2003/9

Y1 - 2003/9

N2 - A point defect model for CdTe is presented based on a selection of potentially electrically active point defects which includes VCd, Cdi, VTe, Tei and TeCd. The reaction energies and entropies of the defects were established. The effect of changing the Fermi energy with Cd partial pressure and temperature are then discussed in detail. The defect concentrations are given as functions of Cd partial pressure and the minimum attainable deviation in stoichiometry is derived. Through the analysis and the calculations, a specific detailed recipe for post-growth annealing is suggested.

AB - A point defect model for CdTe is presented based on a selection of potentially electrically active point defects which includes VCd, Cdi, VTe, Tei and TeCd. The reaction energies and entropies of the defects were established. The effect of changing the Fermi energy with Cd partial pressure and temperature are then discussed in detail. The defect concentrations are given as functions of Cd partial pressure and the minimum attainable deviation in stoichiometry is derived. Through the analysis and the calculations, a specific detailed recipe for post-growth annealing is suggested.

KW - A1. Annealing

KW - A1. Cd Partial pressure

KW - A1. Defect concentrations

KW - A1. Point defects

KW - A1. Quasichemical equilibrium

KW - B1. CdTe

UR - https://www.scopus.com/pages/publications/0043172353

U2 - 10.1016/S0022-0248(03)01373-3

DO - 10.1016/S0022-0248(03)01373-3

M3 - 文章

AN - SCOPUS:0043172353

SN - 0022-0248

VL - 256

SP - 266

EP - 275

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Point defects in CdTe

Abstract

Keywords

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