Point defects in Cd0.95Zn0.05Te

Yujie Li; Guoli Ma; Wanqi Jie

doi:10.1016/S0022-0248(03)01432-5

Point defects in Cd_0.95Zn_0.05Te

Yujie Li
, Guoli Ma
, Wanqi Jie

School of Materials Sience and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd_1-xZn_xTe. In Cd _0.95Zn_0.05Te crystals, Cd_i ^̇̇ is found to be the main point defect at high Cd partial pressures, and V″_Cd at low partial pressures. On the Te-rich side, the concentrations of Te_ca^̇̇ and Te _ca^̇ are sufficiently high to significantly influence the electrical properties of Cd_0.95Zn_0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd_0.95Zn_0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd _0.95Zn_0.05Te is suggested following calculations based on the model.

Original language	English
Pages (from-to)	219-224
Number of pages	6
Journal	Journal of Crystal Growth
Volume	257
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(03)01432-5
State	Published - Oct 2003

Keywords

A1. Annealing
A1. Point defects
A1. Quasichemical equilibrium
B1. Cd ZnTe

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10.1016/S0022-0248(03)01432-5

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title = "Point defects in Cd0.95Zn0.05Te",

abstract = "A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd1-xZnxTe. In Cd 0.95Zn0.05Te crystals, Cdi{\. }̇ is found to be the main point defect at high Cd partial pressures, and V″Cd at low partial pressures. On the Te-rich side, the concentrations of Tec{\.a}̇ and Te c{\.a} are sufficiently high to significantly influence the electrical properties of Cd0.95Zn0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd0.95Zn0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd 0.95Zn0.05Te is suggested following calculations based on the model.",

keywords = "A1. Annealing, A1. Point defects, A1. Quasichemical equilibrium, B1. Cd ZnTe",

author = "Yujie Li and Guoli Ma and Wanqi Jie",

year = "2003",

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doi = "10.1016/S0022-0248(03)01432-5",

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volume = "257",

pages = "219--224",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Point defects in Cd0.95Zn0.05Te

AU - Li, Yujie

AU - Ma, Guoli

AU - Jie, Wanqi

PY - 2003/10

Y1 - 2003/10

N2 - A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd1-xZnxTe. In Cd 0.95Zn0.05Te crystals, Cdi ̇̇ is found to be the main point defect at high Cd partial pressures, and V″Cd at low partial pressures. On the Te-rich side, the concentrations of Tecȧ̇ and Te cȧ are sufficiently high to significantly influence the electrical properties of Cd0.95Zn0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd0.95Zn0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd 0.95Zn0.05Te is suggested following calculations based on the model.

AB - A point defect model for the binary compound CdTe proposed in a former paper is generalized to Cd1-xZnxTe. In Cd 0.95Zn0.05Te crystals, Cdi ̇̇ is found to be the main point defect at high Cd partial pressures, and V″Cd at low partial pressures. On the Te-rich side, the concentrations of Tecȧ̇ and Te cȧ are sufficiently high to significantly influence the electrical properties of Cd0.95Zn0.05Te. Excess Te in Te-rich crystals may result in ionized Cd vacancies and Te anti-sites while excess Cd in Cd-rich Cd0.95Zn0.05Te may exist as Cd interstitials. A detailed recipe for the post-growth annealing of Cd 0.95Zn0.05Te is suggested following calculations based on the model.

KW - A1. Annealing

KW - A1. Point defects

KW - A1. Quasichemical equilibrium

KW - B1. Cd ZnTe

UR - https://www.scopus.com/pages/publications/0041360392

U2 - 10.1016/S0022-0248(03)01432-5

DO - 10.1016/S0022-0248(03)01432-5

M3 - 文章

AN - SCOPUS:0041360392

SN - 0022-0248

VL - 257

SP - 219

EP - 224

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Point defects in Cd_0.95Zn_0.05Te

Abstract

Keywords

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