Plasmon-induced hot electrons emission enhanced by Fabry–Perot cavity resonance on SOI

Zhiqiang Yang; Yang Pang; Heng Wang; Kang Du; Wending Zhang; Xuetao Gan; Soo Jin Chua; Ting Mei

doi:10.1016/j.optcom.2020.125930

Plasmon-induced hot electrons emission enhanced by Fabry–Perot cavity resonance on SOI

Zhiqiang Yang, Yang Pang, Heng Wang, Kang Du, Wending Zhang, Xuetao Gan, Soo Jin Chua, Ting Mei

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this investigation, we report an Au/Si hot electron infrared detector fabricated on an SOI substrate. The simulation and experimental results show that Fabry–Perot cavity resonance on the SOI substrate and the surface plasmons excited by the Au nanostructures enhance the photo absorption in Au. Spectral response peaks of the hot electron photocurrent occur in the infrared band at a photon energy much smaller than the bandgap energy of Si. A maximum photocurrent was obtained at an annealing time of 90 s of the nanostructured Au film, and the SEM image showed the formation of a connected semi-island structure during the annealing. This hot electron device paves the way for extending infrared detection wavelength of SOI based detectors.

Original language	English
Article number	125930
Journal	Optics Communications
Volume	473
DOIs	https://doi.org/10.1016/j.optcom.2020.125930
State	Published - 15 Oct 2020

Keywords

Fabry–Perot resonance
Hot electron
Silicon on insulator
Surface plasmon

Access to Document

10.1016/j.optcom.2020.125930

Cite this

@article{e0ea11344aa14a7ba3154e8a9245d9c0,

title = "Plasmon-induced hot electrons emission enhanced by Fabry–Perot cavity resonance on SOI",

abstract = "In this investigation, we report an Au/Si hot electron infrared detector fabricated on an SOI substrate. The simulation and experimental results show that Fabry–Perot cavity resonance on the SOI substrate and the surface plasmons excited by the Au nanostructures enhance the photo absorption in Au. Spectral response peaks of the hot electron photocurrent occur in the infrared band at a photon energy much smaller than the bandgap energy of Si. A maximum photocurrent was obtained at an annealing time of 90 s of the nanostructured Au film, and the SEM image showed the formation of a connected semi-island structure during the annealing. This hot electron device paves the way for extending infrared detection wavelength of SOI based detectors.",

keywords = "Fabry–Perot resonance, Hot electron, Silicon on insulator, Surface plasmon",

author = "Zhiqiang Yang and Yang Pang and Heng Wang and Kang Du and Wending Zhang and Xuetao Gan and Chua, {Soo Jin} and Ting Mei",

note = "Publisher Copyright: {\textcopyright} 2020",

year = "2020",

month = oct,

day = "15",

doi = "10.1016/j.optcom.2020.125930",

language = "英语",

volume = "473",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Plasmon-induced hot electrons emission enhanced by Fabry–Perot cavity resonance on SOI

AU - Yang, Zhiqiang

AU - Pang, Yang

AU - Wang, Heng

AU - Du, Kang

AU - Zhang, Wending

AU - Gan, Xuetao

AU - Chua, Soo Jin

AU - Mei, Ting

PY - 2020/10/15

Y1 - 2020/10/15

N2 - In this investigation, we report an Au/Si hot electron infrared detector fabricated on an SOI substrate. The simulation and experimental results show that Fabry–Perot cavity resonance on the SOI substrate and the surface plasmons excited by the Au nanostructures enhance the photo absorption in Au. Spectral response peaks of the hot electron photocurrent occur in the infrared band at a photon energy much smaller than the bandgap energy of Si. A maximum photocurrent was obtained at an annealing time of 90 s of the nanostructured Au film, and the SEM image showed the formation of a connected semi-island structure during the annealing. This hot electron device paves the way for extending infrared detection wavelength of SOI based detectors.

AB - In this investigation, we report an Au/Si hot electron infrared detector fabricated on an SOI substrate. The simulation and experimental results show that Fabry–Perot cavity resonance on the SOI substrate and the surface plasmons excited by the Au nanostructures enhance the photo absorption in Au. Spectral response peaks of the hot electron photocurrent occur in the infrared band at a photon energy much smaller than the bandgap energy of Si. A maximum photocurrent was obtained at an annealing time of 90 s of the nanostructured Au film, and the SEM image showed the formation of a connected semi-island structure during the annealing. This hot electron device paves the way for extending infrared detection wavelength of SOI based detectors.

KW - Fabry–Perot resonance

KW - Hot electron

KW - Silicon on insulator

KW - Surface plasmon

UR - http://www.scopus.com/inward/record.url?scp=85083297508&partnerID=8YFLogxK

U2 - 10.1016/j.optcom.2020.125930

DO - 10.1016/j.optcom.2020.125930

M3 - 文章

AN - SCOPUS:85083297508

SN - 0030-4018

VL - 473

JO - Optics Communications

JF - Optics Communications

M1 - 125930

ER -

Plasmon-induced hot electrons emission enhanced by Fabry–Perot cavity resonance on SOI

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this