Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures

Yuanying Zhang; Binghe Ma; Xiaojing Wang; Jinjun Deng; Xingxu Zhang; Jian Luo; Fengyun Liu; Yunzhe Liu; Tao Zhang

doi:10.1109/MEMS64181.2026.11419578

Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures

Yuanying Zhang
, Binghe Ma
, Xiaojing Wang
, Jinjun Deng
, Xingxu Zhang
, Jian Luo
, Fengyun Liu
, Yunzhe Liu
, Tao Zhang

School of Microelectronics

Northwestern Polytechnical University Xian
Advanced Interdisciplinary Technology Research Center in National Innovation Institute of Defense Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The zero drift is a key factor affecting the measurement accuracy of the piezoresistive pressure sensor at 500° C. This report presents for the first time the high-temperature piezoresistive pressure sensor fabricated by in-situ doping technology. Device layers of appropriate concentration are directly grown through in-situ doping technology. There is no need to perform ion implantation or thermal diffusion of new impurity elements into the silicon of the device layer again. At 500° C for 8 hours, the zero drift of the sensor has reached an outstanding 218 μ V. After linear temperature compensation, the pressure measurement error within the entire temperature range reached ± 1.83% FS. The in-situ doping type pressure sensor not only improves the temperature stability at high temperatures, but also promotes the development of MEMS high-temperature pressure sensors towards the direction of high performance.

Original language	English
Title of host publication	2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	726-729
Number of pages	4
ISBN (Electronic)	9798331572518
DOIs	https://doi.org/10.1109/MEMS64181.2026.11419578
State	Published - 2026
Event	39th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2026 - Salzburg, Austria Duration: 25 Jan 2026 → 29 Jan 2026

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)	1084-6999

Conference

Conference	39th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2026
Country/Territory	Austria
City	Salzburg
Period	25/01/26 → 29/01/26

Keywords

High precision
In situ doping technology
Piezoresistive pressure sensor
Wide temperature range

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10.1109/MEMS64181.2026.11419578

Cite this

Zhang, Y., Ma, B., Wang, X., Deng, J., Zhang, X., Luo, J., Liu, F., Liu, Y., & Zhang, T. (2026). Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures. In 2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026 (pp. 726-729). (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMS64181.2026.11419578

Zhang, Yuanying ; Ma, Binghe ; Wang, Xiaojing et al. / Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures. 2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026. Institute of Electrical and Electronics Engineers Inc., 2026. pp. 726-729 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

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title = "Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures",

abstract = "The zero drift is a key factor affecting the measurement accuracy of the piezoresistive pressure sensor at 500° C. This report presents for the first time the high-temperature piezoresistive pressure sensor fabricated by in-situ doping technology. Device layers of appropriate concentration are directly grown through in-situ doping technology. There is no need to perform ion implantation or thermal diffusion of new impurity elements into the silicon of the device layer again. At 500° C for 8 hours, the zero drift of the sensor has reached an outstanding 218 μ V. After linear temperature compensation, the pressure measurement error within the entire temperature range reached ± 1.83\% FS. The in-situ doping type pressure sensor not only improves the temperature stability at high temperatures, but also promotes the development of MEMS high-temperature pressure sensors towards the direction of high performance.",

keywords = "High precision, In situ doping technology, Piezoresistive pressure sensor, Wide temperature range",

author = "Yuanying Zhang and Binghe Ma and Xiaojing Wang and Jinjun Deng and Xingxu Zhang and Jian Luo and Fengyun Liu and Yunzhe Liu and Tao Zhang",

note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 39th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2026 ; Conference date: 25-01-2026 Through 29-01-2026",

year = "2026",

doi = "10.1109/MEMS64181.2026.11419578",

language = "英语",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "726--729",

booktitle = "2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026",

}

Zhang, Y, Ma, B, Wang, X, Deng, J, Zhang, X, Luo, J, Liu, F, Liu, Y & Zhang, T 2026, Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures. in 2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Institute of Electrical and Electronics Engineers Inc., pp. 726-729, 39th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2026, Salzburg, Austria, 25/01/26. https://doi.org/10.1109/MEMS64181.2026.11419578

Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures. / Zhang, Yuanying; Ma, Binghe; Wang, Xiaojing et al.
2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026. Institute of Electrical and Electronics Engineers Inc., 2026. p. 726-729 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures

AU - Zhang, Yuanying

AU - Ma, Binghe

AU - Wang, Xiaojing

AU - Deng, Jinjun

AU - Zhang, Xingxu

AU - Luo, Jian

AU - Liu, Fengyun

AU - Liu, Yunzhe

AU - Zhang, Tao

PY - 2026

Y1 - 2026

N2 - The zero drift is a key factor affecting the measurement accuracy of the piezoresistive pressure sensor at 500° C. This report presents for the first time the high-temperature piezoresistive pressure sensor fabricated by in-situ doping technology. Device layers of appropriate concentration are directly grown through in-situ doping technology. There is no need to perform ion implantation or thermal diffusion of new impurity elements into the silicon of the device layer again. At 500° C for 8 hours, the zero drift of the sensor has reached an outstanding 218 μ V. After linear temperature compensation, the pressure measurement error within the entire temperature range reached ± 1.83% FS. The in-situ doping type pressure sensor not only improves the temperature stability at high temperatures, but also promotes the development of MEMS high-temperature pressure sensors towards the direction of high performance.

AB - The zero drift is a key factor affecting the measurement accuracy of the piezoresistive pressure sensor at 500° C. This report presents for the first time the high-temperature piezoresistive pressure sensor fabricated by in-situ doping technology. Device layers of appropriate concentration are directly grown through in-situ doping technology. There is no need to perform ion implantation or thermal diffusion of new impurity elements into the silicon of the device layer again. At 500° C for 8 hours, the zero drift of the sensor has reached an outstanding 218 μ V. After linear temperature compensation, the pressure measurement error within the entire temperature range reached ± 1.83% FS. The in-situ doping type pressure sensor not only improves the temperature stability at high temperatures, but also promotes the development of MEMS high-temperature pressure sensors towards the direction of high performance.

KW - High precision

KW - In situ doping technology

KW - Piezoresistive pressure sensor

KW - Wide temperature range

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T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 726

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BT - 2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2026

Y2 - 25 January 2026 through 29 January 2026

ER -

Zhang Y, Ma B, Wang X, Deng J, Zhang X, Luo J et al. Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures. In 2026 IEEE 39th International Conference on Micro Electro Mechanical Systems, MEMS 2026. Institute of Electrical and Electronics Engineers Inc. 2026. p. 726-729. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMS64181.2026.11419578

Piezoresistive Pressure Sensors Fabricated Based on in-Situ Doping Technology Exhibits Outstanding Performance at High Temperatures

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