Photoluminescence investigation of CdZnTe: In single crystals annealed in CdZn vapors

Ge Yang; Wanqi Jie; Qunying Zhang

doi:10.1557/jmr.2006.0219

Photoluminescence investigation of CdZnTe: In single crystals annealed in CdZn vapors

Ge Yang
, Wanqi Jie
, Qunying Zhang

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian
Beijing Power Machinery Research Institute

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A⁰, X) peak, which was on the right shoulder of the neutral donor bound exciton (D⁰, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of D_complex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.

Original language	English
Pages (from-to)	1807-1809
Number of pages	3
Journal	Journal of Materials Research
Volume	21
Issue number	7
DOIs	https://doi.org/10.1557/jmr.2006.0219
State	Published - Jul 2006

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title = "Photoluminescence investigation of CdZnTe: In single crystals annealed in CdZn vapors",

abstract = "CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.",

author = "Ge Yang and Wanqi Jie and Qunying Zhang",

year = "2006",

month = jul,

doi = "10.1557/jmr.2006.0219",

language = "英语",

volume = "21",

pages = "1807--1809",

journal = "Journal of Materials Research",

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publisher = "Springer International Publishing AG",

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TY - JOUR

T1 - Photoluminescence investigation of CdZnTe

T2 - In single crystals annealed in CdZn vapors

AU - Yang, Ge

AU - Jie, Wanqi

AU - Zhang, Qunying

PY - 2006/7

Y1 - 2006/7

N2 - CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.

AB - CdZnTe:In single crystals were annealed in CdZn vapors through a method involving a high-temperature step and a low-temperature step in sequence. The effects of annealing on the properties of CdZnTe:In were characterized with photoluminescence (PL) spectra. The neutral acceptor bound exciton (A0, X) peak, which was on the right shoulder of the neutral donor bound exciton (D0, X) peak, disappeared after annealing. A fine donor-acceptor pair structure and its longitudinal optical phonon replicas were clear before annealing. However, both of them became undistinguishable in the PL spectrum of annealed CdZnTe:In. The two phenomena imply that the annealing treatment can remove the impurities from CdZnTe:In wafers effectively. In addition, the intensity of Dcomplex band fell remarkably after annealing, which confirmed that Cd vacancies were well-compensated in the annealing treatment.

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U2 - 10.1557/jmr.2006.0219

DO - 10.1557/jmr.2006.0219

M3 - 文章

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SN - 0884-2914

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SP - 1807

EP - 1809

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 7

ER -

Photoluminescence investigation of CdZnTe: In single crystals annealed in CdZn vapors

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