Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal

Qiang Li; Wanqi Jie; Li Fu; Ge Yang; Gangqiang Zha; Tao Wang; Dongmei Zeng

doi:10.1063/1.2213155

Photoluminescence analysis on the indium doped Cd_0.9Zn _0.1Te crystal

Qiang Li
, Wanqi Jie
, Li Fu
, Ge Yang
, Gangqiang Zha
, Tao Wang
, Dongmei Zeng

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAP_s) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [V_Cd-In_Cd]^- singly negative complex and the neutral complex [V_Cd-2In _Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [In_Cd]⁺ donor and Te antisite [Te_Cd] ⁴⁺ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.

Original language	English
Article number	013518
Journal	Journal of Applied Physics
Volume	100
Issue number	1
DOIs	https://doi.org/10.1063/1.2213155
State	Published - 2006

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@article{718109f55055439e87a08b9ae0dcca2f,

title = "Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal",

abstract = "Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [VCd-InCd]- singly negative complex and the neutral complex [VCd-2In Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [InCd]+ donor and Te antisite [TeCd] 4+ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.",

author = "Qiang Li and Wanqi Jie and Li Fu and Ge Yang and Gangqiang Zha and Tao Wang and Dongmei Zeng",

year = "2006",

doi = "10.1063/1.2213155",

language = "英语",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Photoluminescence analysis on the indium doped Cd0.9Zn 0.1Te crystal

AU - Li, Qiang

AU - Jie, Wanqi

AU - Fu, Li

AU - Yang, Ge

AU - Zha, Gangqiang

AU - Wang, Tao

AU - Zeng, Dongmei

PY - 2006

Y1 - 2006

N2 - Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [VCd-InCd]- singly negative complex and the neutral complex [VCd-2In Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [InCd]+ donor and Te antisite [TeCd] 4+ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.

AB - Photoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the [VCd-InCd]- singly negative complex and the neutral complex [VCd-2In Cd]. Cd vacancy acceptors are compensated dominantly due to indium doped [InCd]+ donor and Te antisite [TeCd] 4+ donor, which improves the resistivity of CdZnTe: In crystal. Energy level model diagram of CdZnTe:In crystal is discussed. Current-voltage measurement results confirm that Cd vacancy compensation by doped indium improves the resisitivity of CdZnTe crystal.

UR - https://www.scopus.com/pages/publications/33746211169

U2 - 10.1063/1.2213155

DO - 10.1063/1.2213155

M3 - 文章

AN - SCOPUS:33746211169

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 013518

ER -

Photoluminescence analysis on the indium doped Cd_0.9Zn _0.1Te crystal

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