Photoluminescence analysis of Cd1-xZnxTe single crystals annealed by a two-step method

Ge Yang; Wanqi Jie

doi:10.1016/j.jcrysgro.2006.06.016

Photoluminescence analysis of Cd_1-xZn_xTe single crystals annealed by a two-step method

Ge Yang
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Cd_1-xZn_xTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D⁰,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band D_complex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers.

Original language	English
Pages (from-to)	250-253
Number of pages	4
Journal	Journal of Crystal Growth
Volume	294
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.06.016
State	Published - 4 Sep 2006

Keywords

A1. Defects
A1. Impurities
B1. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2006.06.016

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title = "Photoluminescence analysis of Cd1-xZnxTe single crystals annealed by a two-step method",

abstract = "Cd1-xZnxTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D0,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band Dcomplex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers.",

keywords = "A1. Defects, A1. Impurities, B1. Semiconducting II-VI materials",

author = "Ge Yang and Wanqi Jie",

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language = "英语",

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pages = "250--253",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Photoluminescence analysis of Cd1-xZnxTe single crystals annealed by a two-step method

AU - Yang, Ge

AU - Jie, Wanqi

PY - 2006/9/4

Y1 - 2006/9/4

N2 - Cd1-xZnxTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D0,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band Dcomplex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers.

AB - Cd1-xZnxTe (CZT) single crystals were annealed by a two-step method, including a vapor-environment step and a liquid-environment step in sequence. Photoluminescence spectra were used to investigate the effects of annealing on the properties of CZT. After annealing the full width at half maximum of the donor-bound exciton (D0,X) peak was reduced, and the free-exciton emission was weakened. Meanwhile, the intensity of the donor-acceptor pair peak was greatly decreased. In addition, the deep defect-related emission band Dcomplex disappeared after the annealing, which was distinct for as-grown CZT wafers. The investigation confirms that the two-step annealing can compensate for cadmium vacancies and possibly reduce the impurities from CZT wafers.

KW - A1. Defects

KW - A1. Impurities

KW - B1. Semiconducting II-VI materials

UR - https://www.scopus.com/pages/publications/33947116353

U2 - 10.1016/j.jcrysgro.2006.06.016

DO - 10.1016/j.jcrysgro.2006.06.016

M3 - 文章

AN - SCOPUS:33947116353

SN - 0022-0248

VL - 294

SP - 250

EP - 253

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Photoluminescence analysis of Cd_1-xZn_xTe single crystals annealed by a two-step method

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Keywords

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