Photoconductive gain under low-flux X-ray irradiation in 4HCB organic single crystal detectors

Dou Zhao; Xin Liu; Jingyi Yu; Meng Xu; Binbin Zhang; Yadong Xu; Wanqi Jie

doi:10.35848/1882-0786/ab9adb

Photoconductive gain under low-flux X-ray irradiation in 4HCB organic single crystal detectors

Dou Zhao
, Xin Liu
, Jingyi Yu
, Meng Xu
, Binbin Zhang
, Yadong Xu
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A photoconductive gain (up to 400%) is observed in a 4-hydroxycyanobenzene (4HCB, C7H5NO) bulk organic semiconducting detector, resulting in a high sensitivity of 38.8 μC Gyair-1 s-1 cm-2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.

Original language	English
Article number	071004
Journal	Applied Physics Express
Volume	13
Issue number	7
DOIs	https://doi.org/10.35848/1882-0786/ab9adb
State	Published - 1 Jul 2020

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title = "Photoconductive gain under low-flux X-ray irradiation in 4HCB organic single crystal detectors",

abstract = "A photoconductive gain (up to 400\%) is observed in a 4-hydroxycyanobenzene (4HCB, C7H5NO) bulk organic semiconducting detector, resulting in a high sensitivity of 38.8 μC Gyair-1 s-1 cm-2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.",

author = "Dou Zhao and Xin Liu and Jingyi Yu and Meng Xu and Binbin Zhang and Yadong Xu and Wanqi Jie",

note = "Publisher Copyright: {\textcopyright} 2020 The Japan Society of Applied Physics.",

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doi = "10.35848/1882-0786/ab9adb",

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TY - JOUR

T1 - Photoconductive gain under low-flux X-ray irradiation in 4HCB organic single crystal detectors

AU - Zhao, Dou

AU - Liu, Xin

AU - Yu, Jingyi

AU - Xu, Meng

AU - Zhang, Binbin

AU - Xu, Yadong

AU - Jie, Wanqi

PY - 2020/7/1

Y1 - 2020/7/1

N2 - A photoconductive gain (up to 400%) is observed in a 4-hydroxycyanobenzene (4HCB, C7H5NO) bulk organic semiconducting detector, resulting in a high sensitivity of 38.8 μC Gyair-1 s-1 cm-2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.

AB - A photoconductive gain (up to 400%) is observed in a 4-hydroxycyanobenzene (4HCB, C7H5NO) bulk organic semiconducting detector, resulting in a high sensitivity of 38.8 μC Gyair-1 s-1 cm-2 under 50 kVp X-ray beam irradiation. The gain variation tendency as the function of both the applied bias voltage and the incident X-ray dose rate is revealed. A rising stage at the gain versus dose rate curve is observed at the low-flux range of X-ray irradiation, attributed to the trap-filling process. A deep-trapping dependent model is proposed, in which the hole injection assisted by trapped electrons is responsible for the gain.

UR - https://www.scopus.com/pages/publications/85091395566

U2 - 10.35848/1882-0786/ab9adb

DO - 10.35848/1882-0786/ab9adb

M3 - 文章

AN - SCOPUS:85091395566

SN - 1882-0778

VL - 13

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 071004

ER -

Photoconductive gain under low-flux X-ray irradiation in 4HCB organic single crystal detectors

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