Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

Aoqiu Wang; Jiakui Zhang; Gangqiang Zha; Lingyan Xu; Wanqi Jie

doi:10.1007/s10854-021-05739-3

Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

Aoqiu Wang
, Jiakui Zhang
, Gangqiang Zha
, Lingyan Xu
, Wanqi Jie

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

TE/CdZnTe/Pt/Ti/SiO₂/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO₂/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 10¹⁹ cm⁻³ trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO₂/Si structure has a good potential as resistive switching random access memory with over 10³ ON/OFF ratio and at least 10³ s retention time.

Original language	English
Pages (from-to)	10809-10819
Number of pages	11
Journal	Journal of Materials Science: Materials in Electronics
Volume	32
Issue number	8
DOIs	https://doi.org/10.1007/s10854-021-05739-3
State	Published - Apr 2021

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@article{aa65fb6cd9b54116a002a4932cba5574,

title = "Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure",

abstract = "TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and \textasciitilde{} 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.",

author = "Aoqiu Wang and Jiakui Zhang and Gangqiang Zha and Lingyan Xu and Wanqi Jie",

note = "Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.",

year = "2021",

month = apr,

doi = "10.1007/s10854-021-05739-3",

language = "英语",

volume = "32",

pages = "10809--10819",

journal = "Journal of Materials Science: Materials in Electronics",

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TY - JOUR

T1 - Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

AU - Wang, Aoqiu

AU - Zhang, Jiakui

AU - Zha, Gangqiang

AU - Xu, Lingyan

AU - Jie, Wanqi

PY - 2021/4

Y1 - 2021/4

N2 - TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.

AB - TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.

UR - https://www.scopus.com/pages/publications/85103101855

U2 - 10.1007/s10854-021-05739-3

DO - 10.1007/s10854-021-05739-3

M3 - 文章

AN - SCOPUS:85103101855

SN - 0957-4522

VL - 32

SP - 10809

EP - 10819

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 8

ER -

Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

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