Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

Kun Cao; Wanqi Jie; Gangqiang Zha; Jiangpeng Dong; Yang Li; Sihong Wu; Yawei Wang; Hao Zhang; Yun Lin

doi:10.1016/j.apsusc.2019.144431

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

Kun Cao, Wanqi Jie, Gangqiang Zha, Jiangpeng Dong, Yang Li, Sihong Wu, Yawei Wang, Hao Zhang, Yun Lin

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.

Original language	English
Article number	144431
Journal	Applied Surface Science
Volume	504
DOIs	https://doi.org/10.1016/j.apsusc.2019.144431
State	Published - 28 Feb 2020

Keywords

Antiphase boundary
CdZnTe epilayer
Close spaced sublimation
Evolution
Origin
Threading dislocation

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10.1016/j.apsusc.2019.144431

Cite this

@article{aaa7377f14db49d89a65a42d3037bbd8,

title = "Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation",

abstract = "The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.",

keywords = "Antiphase boundary, CdZnTe epilayer, Close spaced sublimation, Evolution, Origin, Threading dislocation",

author = "Kun Cao and Wanqi Jie and Gangqiang Zha and Jiangpeng Dong and Yang Li and Sihong Wu and Yawei Wang and Hao Zhang and Yun Lin",

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year = "2020",

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day = "28",

doi = "10.1016/j.apsusc.2019.144431",

language = "英语",

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journal = "Applied Surface Science",

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T1 - Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

AU - Cao, Kun

AU - Jie, Wanqi

AU - Zha, Gangqiang

AU - Dong, Jiangpeng

AU - Li, Yang

AU - Wu, Sihong

AU - Wang, Yawei

AU - Zhang, Hao

AU - Lin, Yun

PY - 2020/2/28

Y1 - 2020/2/28

N2 - The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.

AB - The origin and evolution of threading dislocations (TDs) in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation (CSS) were experimentally investigated. The dislocation formed at the initial growth stage was observed and analyzed by the plan-view (scanning) transmission electron microscopy (STEM). The thickness-dependent migration and recombination of TDs along the growth direction were revealed by the dislocation etch pit. The origin of TDs is mainly related to the mismatch of growth domains. Strong lateral migration of dislocation in film can be explained by epitaxial lateral overgrowth (ELO) process. The blocking effect on TD movement by growth pit which is related to antiphase boundary (APB) is the primary cause of epilayer quality deterioration.

KW - Antiphase boundary

KW - CdZnTe epilayer

KW - Close spaced sublimation

KW - Evolution

KW - Origin

KW - Threading dislocation

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U2 - 10.1016/j.apsusc.2019.144431

DO - 10.1016/j.apsusc.2019.144431

M3 - 文章

AN - SCOPUS:85075479070

SN - 0169-4332

VL - 504

JO - Applied Surface Science

JF - Applied Surface Science

M1 - 144431

ER -

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

Abstract

Keywords

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Cite this

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this

Origin and evolution of threading dislocation in CdZnTe(0 0 1)/GaAs(0 0 1) epilayer grown by close spaced sublimation