New MOCVD precursor for iridium thin films deposition

Xin Yan; Qiuyu Zhang; Xiaodong Fan

doi:10.1016/j.matlet.2006.04.034

New MOCVD precursor for iridium thin films deposition

Xin Yan
, Qiuyu Zhang
, Xiaodong Fan

School of Chemistry and Chemical Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)₃ (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, ¹H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)₃ (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.

Original language	English
Pages (from-to)	216-218
Number of pages	3
Journal	Materials Letters
Volume	61
Issue number	1
DOIs	https://doi.org/10.1016/j.matlet.2006.04.034
State	Published - Jan 2007

Keywords

Iridium
MOCVD
Precursor
Thin films

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10.1016/j.matlet.2006.04.034

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title = "New MOCVD precursor for iridium thin films deposition",

abstract = "Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, 1H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)3 (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.",

keywords = "Iridium, MOCVD, Precursor, Thin films",

author = "Xin Yan and Qiuyu Zhang and Xiaodong Fan",

year = "2007",

month = jan,

doi = "10.1016/j.matlet.2006.04.034",

language = "英语",

volume = "61",

pages = "216--218",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - New MOCVD precursor for iridium thin films deposition

AU - Yan, Xin

AU - Zhang, Qiuyu

AU - Fan, Xiaodong

PY - 2007/1

Y1 - 2007/1

N2 - Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, 1H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)3 (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.

AB - Thin films of metallic iridium were grown by metal organic chemical vapor deposition in a vertical hot-wall reactor. The new solid compound Ir(thd)3 (thd = 2,2,6,6-tetramethyl-3,5-heptadione) was used as the iridium source. The iridium precursor was analyzed by elemental analysis, infrared spectroscopy, 1H NMR spectroscopy and thermogravimetry (TG). The results of TG showed that the iridium β-diketonate was found to vary with the nature of the β-diketonate group and the use of the thd led to a precursor with higher volatilities than the Ir(acac)3 (acac = acetylacetonate) source. Deposited iridium films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) in order to determine crystallinity and surface morphology.

KW - Iridium

KW - MOCVD

KW - Precursor

KW - Thin films

UR - https://www.scopus.com/pages/publications/33750618242

U2 - 10.1016/j.matlet.2006.04.034

DO - 10.1016/j.matlet.2006.04.034

M3 - 文章

AN - SCOPUS:33750618242

SN - 0167-577X

VL - 61

SP - 216

EP - 218

JO - Materials Letters

JF - Materials Letters

IS - 1

ER -

New MOCVD precursor for iridium thin films deposition

Abstract

Keywords

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