MoO₃–MoS₂ vertical heterostructures synthesized via one-step CVD process for optoelectronics

The 2D transitional metal oxides/transition-metal dichalcogenides vertical heterostructures of MoO₃–MoS₂ are successfully synthesized on SiO₂/Si substrates via one-step chemical vapor deposition process. The vertical MoO₃–MoS₂ heterostructures exhibit the average size of ∼20 µm and the thickness down to ∼10 nm. Moreover, the phototransistor device based on MoO₃–MoS₂ heterostructures presents responsivity of 5.41 × 10³ A W⁻¹, detectivity of 0.89 × 10¹⁰ Jones and external quantum efficiency of 1263.4%, respectively, under a 532 nm wavelength light. This study affords a new path to simplify process of fabricating MoO₃–MoS₂ vertical heterostructures for electronic and optoelectronic applications.