TY - GEN
T1 - Modeling and Analysis of IGBT Power Module Electro-thermal Coupling Model
AU - Fan, Xianrong
AU - Wang, Yufeng
AU - Li, Weilin
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/5/28
Y1 - 2021/5/28
N2 - Power semiconductor devices play a key role in aerospace, electric vehicles, medical and so on. As the main force in power semiconductor devices, IGBT is currently the most advantageous power semiconductor device. Firstly, this paper proposes a power loss calculation model based on the average loss of the switching period. Secondly, an electrothermal simulation model of the IGBT module is established in MATLAB and PLECS combined with the thermal network model. Finally, the simulation results of the two models are compared to discuss the influence of different parameter changes on the junction temperature and power loss of the IGBT module. Form the simulation analysis, it can be seen that the electrothermal model proposed in this paper can accurately determine the trend of device junction temperature changes, and has a good application prospect in the life prediction of power devices in the future.
AB - Power semiconductor devices play a key role in aerospace, electric vehicles, medical and so on. As the main force in power semiconductor devices, IGBT is currently the most advantageous power semiconductor device. Firstly, this paper proposes a power loss calculation model based on the average loss of the switching period. Secondly, an electrothermal simulation model of the IGBT module is established in MATLAB and PLECS combined with the thermal network model. Finally, the simulation results of the two models are compared to discuss the influence of different parameter changes on the junction temperature and power loss of the IGBT module. Form the simulation analysis, it can be seen that the electrothermal model proposed in this paper can accurately determine the trend of device junction temperature changes, and has a good application prospect in the life prediction of power devices in the future.
KW - IGBT module
KW - conduction losses
KW - failure
KW - junction temperature
KW - switching losses
UR - https://www.scopus.com/pages/publications/85114202064
U2 - 10.1109/CIEEC50170.2021.9510292
DO - 10.1109/CIEEC50170.2021.9510292
M3 - 会议稿件
AN - SCOPUS:85114202064
T3 - Proceedings of 2021 IEEE 4th International Electrical and Energy Conference, CIEEC 2021
BT - Proceedings of 2021 IEEE 4th International Electrical and Energy Conference, CIEEC 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th IEEE China International Electrical and Energy Conference, CIEEC 2021
Y2 - 28 May 2021 through 30 May 2021
ER -