Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel

Zhimin Li; Wancheng Zhou; Tianmin Lei; Fa Luo; Yunxia Huang; Quanxi Cao

doi:10.1016/j.jallcom.2008.07.070

Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel

Zhimin Li
, Wancheng Zhou
, Tianmin Lei
, Fa Luo
, Yunxia Huang
, Quanxi Cao

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian
Xidian University

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

B-doped SiC powders were synthesized at different temperatures by sol-gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the SiC(B) sample has higher values in real part ε′ and imaginary part ε″ of permittivity. The mechanism of dielectric loss by doping has been discussed.

Original language	English
Pages (from-to)	506-509
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	475
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2008.07.070
State	Published - 5 May 2009

Keywords

Dielectric properties
Point defects
SiC(B) solid solution
Sol-gel processes

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10.1016/j.jallcom.2008.07.070

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title = "Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel",

abstract = "B-doped SiC powders were synthesized at different temperatures by sol-gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the SiC(B) sample has higher values in real part ε′ and imaginary part ε″ of permittivity. The mechanism of dielectric loss by doping has been discussed.",

keywords = "Dielectric properties, Point defects, SiC(B) solid solution, Sol-gel processes",

author = "Zhimin Li and Wancheng Zhou and Tianmin Lei and Fa Luo and Yunxia Huang and Quanxi Cao",

year = "2009",

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doi = "10.1016/j.jallcom.2008.07.070",

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pages = "506--509",

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TY - JOUR

T1 - Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel

AU - Li, Zhimin

AU - Zhou, Wancheng

AU - Lei, Tianmin

AU - Luo, Fa

AU - Huang, Yunxia

AU - Cao, Quanxi

PY - 2009/5/5

Y1 - 2009/5/5

N2 - B-doped SiC powders were synthesized at different temperatures by sol-gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the SiC(B) sample has higher values in real part ε′ and imaginary part ε″ of permittivity. The mechanism of dielectric loss by doping has been discussed.

AB - B-doped SiC powders were synthesized at different temperatures by sol-gel. Results show that C-enriched β-SiC is generated completely when the temperature is 1700 °C and SiC(B) solid solution is generated when the temperature is 1800 °C. The electric permittivities of SiC samples were determined in the frequency range of 8.2-12.4 GHz. Results show that the SiC(B) sample has higher values in real part ε′ and imaginary part ε″ of permittivity. The mechanism of dielectric loss by doping has been discussed.

KW - Dielectric properties

KW - Point defects

KW - SiC(B) solid solution

KW - Sol-gel processes

UR - https://www.scopus.com/pages/publications/63649100138

U2 - 10.1016/j.jallcom.2008.07.070

DO - 10.1016/j.jallcom.2008.07.070

M3 - 文章

AN - SCOPUS:63649100138

SN - 0925-8388

VL - 475

SP - 506

EP - 509

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - 1-2

ER -

Microwave dielectric properties of SiC(B) solid solution powder prepared by sol-gel

Abstract

Keywords

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