Microstructure, phase evolution and interfacial effects in a new Zn_0.9Mg_0.1TiO₃-ZnNb₂O₆ ceramic system with greatly induced improvement in microwave dielectric properties

Zn0_.9Mg_0.1TiO₃-ZnNb₂O₆ (ZMT-ZN) ceramics was synthesized and characterized successfully for the first time, and phase conversion to secondary phases was largely restrained due to the introduction of ZnO nano inhibitors. Excellent microwave dielectric properties and optimal combination were achieved for the ceramics sintered at 1100 °C, i.e., ε_r = 27.5, Q × f = 75,000 GHz, τ_f = − 3.8 ppm/°C. Particularly, the comparatively insulated interlayers were considered as the key mechanism to impede transportation or transfer of defects and surface polarization charges. Considering the merits of facile, low cost and simple process, this series of ZMT-ZN ceramics are promising new candidates for ultra-low microwave devices.