Abstract
SiC nanowires with periodically fluctuating hexagonal prisms were synthesized on graphite substrates by a simple and economical technique of chemical vapor deposition in an Ar atmosphere without catalyst assistant. The morphology and structure of SiC nanowires were characterized by X-ray diffraction, Raman scattering spectrum, scanning electron microscopy and transmission electron microscopy. The results showed that the as-synthesized SiC nanowires possessed well crystalled β-SiC, and were composed of periodically fluctuating hexagonal prisms along their whole length with the [1 1 1] growth direction. The growth of SiC nanowires with periodically fluctuating hexagonal prisms was governed by vapor-solid mechanism.
Original language | English |
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Pages (from-to) | L36-L39 |
Journal | Journal of Alloys and Compounds |
Volume | 508 |
Issue number | 2 |
DOIs | |
State | Published - 22 Oct 2010 |
Keywords
- Crystal growth
- Microstructure
- Nanowires
- Silicon carbide