Microstructure and electrical performance of Ce0.3Ni1.5Co2.5Sb12 skutterudite from bulk to film

Dou Li; Shuangming Li; Xuguang Li; Bin Yang; Hong Zhong

doi:10.1016/j.matlet.2021.130581

Microstructure and electrical performance of Ce_0.3Ni_1.5Co_2.5Sb₁₂ skutterudite from bulk to film

Dou Li, Shuangming Li, Xuguang Li, Bin Yang, Hong Zhong

School of Materials Sience and Engineering

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The skutterudite CoSb₃ has been widely concerned, as one of the most studied candidate materials for thermoelectric applications. Here, n-type bulk skutterudite Ce_0.3Ni_1.5Co_2.5Sb₁₂ was successfully prepared under TGZM effect and its thin film deposited by PLD on single crystal Si substrate, to further understand the effect of microstructure and the electrical transport mechanism on the thermoelectric properties from bulk to thin film. It is found that two phases of Sb and CoSb₃ coexist in bulk sample, while abundant nano-granular structures with well-crystallized CoSb₃ and little of CeSb generate in the film. As a result, the maximum value of S and PF reach −250 μV/K and 5275 μW/(mK²) for film sample at 673 K. The PF value of film is four times higher than that of the bulk sample. This provides a novel avenue to increase the thermoelectric properties of skutterudite.

Original language	English
Article number	130581
Journal	Materials Letters
Volume	303
DOIs	https://doi.org/10.1016/j.matlet.2021.130581
State	Published - 15 Nov 2021

Keywords

CoSb
Electrical properties
Thermoelectric
Thin films

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@article{b5d71e7b1a0140a290bff3cfeb485858,

title = "Microstructure and electrical performance of Ce0.3Ni1.5Co2.5Sb12 skutterudite from bulk to film",

abstract = "The skutterudite CoSb3 has been widely concerned, as one of the most studied candidate materials for thermoelectric applications. Here, n-type bulk skutterudite Ce0.3Ni1.5Co2.5Sb12 was successfully prepared under TGZM effect and its thin film deposited by PLD on single crystal Si substrate, to further understand the effect of microstructure and the electrical transport mechanism on the thermoelectric properties from bulk to thin film. It is found that two phases of Sb and CoSb3 coexist in bulk sample, while abundant nano-granular structures with well-crystallized CoSb3 and little of CeSb generate in the film. As a result, the maximum value of S and PF reach −250 μV/K and 5275 μW/(mK2) for film sample at 673 K. The PF value of film is four times higher than that of the bulk sample. This provides a novel avenue to increase the thermoelectric properties of skutterudite.",

keywords = "CoSb, Electrical properties, Thermoelectric, Thin films",

author = "Dou Li and Shuangming Li and Xuguang Li and Bin Yang and Hong Zhong",

note = "Publisher Copyright: {\textcopyright} 2021 Elsevier B.V.",

year = "2021",

month = nov,

day = "15",

doi = "10.1016/j.matlet.2021.130581",

language = "英语",

volume = "303",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Microstructure and electrical performance of Ce0.3Ni1.5Co2.5Sb12 skutterudite from bulk to film

AU - Li, Dou

AU - Li, Shuangming

AU - Li, Xuguang

AU - Yang, Bin

AU - Zhong, Hong

PY - 2021/11/15

Y1 - 2021/11/15

N2 - The skutterudite CoSb3 has been widely concerned, as one of the most studied candidate materials for thermoelectric applications. Here, n-type bulk skutterudite Ce0.3Ni1.5Co2.5Sb12 was successfully prepared under TGZM effect and its thin film deposited by PLD on single crystal Si substrate, to further understand the effect of microstructure and the electrical transport mechanism on the thermoelectric properties from bulk to thin film. It is found that two phases of Sb and CoSb3 coexist in bulk sample, while abundant nano-granular structures with well-crystallized CoSb3 and little of CeSb generate in the film. As a result, the maximum value of S and PF reach −250 μV/K and 5275 μW/(mK2) for film sample at 673 K. The PF value of film is four times higher than that of the bulk sample. This provides a novel avenue to increase the thermoelectric properties of skutterudite.

AB - The skutterudite CoSb3 has been widely concerned, as one of the most studied candidate materials for thermoelectric applications. Here, n-type bulk skutterudite Ce0.3Ni1.5Co2.5Sb12 was successfully prepared under TGZM effect and its thin film deposited by PLD on single crystal Si substrate, to further understand the effect of microstructure and the electrical transport mechanism on the thermoelectric properties from bulk to thin film. It is found that two phases of Sb and CoSb3 coexist in bulk sample, while abundant nano-granular structures with well-crystallized CoSb3 and little of CeSb generate in the film. As a result, the maximum value of S and PF reach −250 μV/K and 5275 μW/(mK2) for film sample at 673 K. The PF value of film is four times higher than that of the bulk sample. This provides a novel avenue to increase the thermoelectric properties of skutterudite.

KW - CoSb

KW - Electrical properties

KW - Thermoelectric

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85111582199&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2021.130581

DO - 10.1016/j.matlet.2021.130581

M3 - 文章

AN - SCOPUS:85111582199

SN - 0167-577X

VL - 303

JO - Materials Letters

JF - Materials Letters

M1 - 130581

ER -

Microstructure and electrical performance of Ce_0.3Ni_1.5Co_2.5Sb₁₂ skutterudite from bulk to film

Abstract

Keywords

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